Discrete Semiconductor Products

IPP057N08N3GXKSA1

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INFINEON

MOSFET TRANSISTOR, N CHANNEL, 80 A, 80 V, 4.9 MOHM, 10 V, 2.8 V ROHS COMPLIANT: YES

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Discrete Semiconductor Products

IPP057N08N3GXKSA1

Active

INFINEON

MOSFET TRANSISTOR, N CHANNEL, 80 A, 80 V, 4.9 MOHM, 10 V, 2.8 V ROHS COMPLIANT: YES

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPP057N08N3GXKSA1

Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 6 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	69 nC
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	150 W
Rds On (Max) @ Id, Vgs	5.7 mOhm
Supplier Device Package	PG-TO220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

OptiMOS 3 Series

Part	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drain to Source Voltage (Vdss)	FET Type	Vgs (Max)	Vgs(th) (Max) @ Id	Technology	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Power Dissipation (Max)
INFINEON IPB038N12N3GATMA1	300 W	13800 pF	120 V	N-Channel	20 V	4 V	MOSFET (Metal Oxide)	211 nC	Surface Mount	175 °C	-55 °C	120 A	3.8 mOhm	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	10 V
INFINEON BSZ42DN25NS3GATMA1	33.8 W	430 pF	250 V	N-Channel	20 V	4 V	MOSFET (Metal Oxide)	5.5 nC	Surface Mount	150 °C	-55 °C	5 A	425 mOhm	8-PowerTDFN	10 V	PG-TSDSON-8-2
INFINEON IPD600N25N3GATMA1	136 W	2350 pF	250 V	N-Channel	20 V	4 V	MOSFET (Metal Oxide)		Surface Mount	175 °C	-55 °C	25 A	60 mOhm	DPAK (2 Leads + Tab) SC-63 TO-252-3	10 V	PG-TO252-3	29 nC
INFINEON BSC093N04LSGATMA1	2.5 W 35 W	1900 pF	40 V	N-Channel	20 V	2 V	MOSFET (Metal Oxide)		Surface Mount	150 °C	-55 °C	13 A 49 A	9.3 mOhm	8-PowerTDFN	4.5 V 10 V	PG-TDSON-8-5	24 nC
INFINEON IPP057N08N3GXKSA1	150 W		80 V	N-Channel	20 V	3.5 V	MOSFET (Metal Oxide)	69 nC	Through Hole	175 °C	-55 °C		5.7 mOhm	TO-220-3	6 V 10 V	PG-TO220-3
INFINEON IPD068N10N3GATMA1	150 W	4910 pF	100 V	N-Channel	20 V	3.5 V	MOSFET (Metal Oxide)	68 nC	Surface Mount	175 °C	-55 °C	90 A	6.8 mOhm	DPAK (2 Leads + Tab) SC-63 TO-252-3	6 V 10 V	PG-TO252-3
INFINEON IPP032N06N3GXKSA1	188 W	13000 pF	60 V	N-Channel	20 V	4 V	MOSFET (Metal Oxide)		Through Hole	175 °C	-55 °C	120 A	3.2 mOhm	TO-220-3	10 V	PG-TO220-3	165 nC
INFINEON BSC060N10NS3GATMA1	125 W		100 V	N-Channel	20 V	3.5 V	MOSFET (Metal Oxide)	68 nC	Surface Mount	150 °C	-55 °C	14.9 A 90 A	6 mOhm	8-PowerTDFN	6 V 10 V	PG-TDSON-8-1		4900 pF
INFINEON BSC160N10NS3GATMA1	60 W	1700 pF	100 V	N-Channel	20 V	3.5 V	MOSFET (Metal Oxide)	25 nC	Surface Mount	150 °C	-55 °C	8.8 A 42 A	16 mOhm	8-PowerTDFN	6 V 10 V	PG-TDSON-8-1
INFINEON BSZ340N08NS3GATMA1		630 pF	80 V	N-Channel	20 V	3.5 V	MOSFET (Metal Oxide)	9.1 nC	Surface Mount	150 °C	-55 °C	6 A 23 A	34 mOhm	8-PowerTDFN	6 V 10 V	PG-TSDSON-8			32 W	2.1 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	20	$ 3.38
	Tube	1	$ 3.40
		10	$ 2.22
		100	$ 1.55
		500	$ 1.26
		1000	$ 1.17
		2000	$ 1.12
Mouser	N/A	1	$ 1.94
		10	$ 1.62
		25	$ 1.17
		500	$ 1.12
Newark	Each	1	$ 1.98
		10	$ 1.20
		100	$ 1.18
		500	$ 1.16
		1000	$ 1.15
		2500	$ 1.14
		5000	$ 1.13

Description

General part information

OptiMOS 3 Series

OptiMOS™ is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle).

Documents

Technical documentation and resources