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BSZ340N08NS3GATMA1
Discrete Semiconductor Products

BSZ340N08NS3GATMA1

Active
INFINEON

OPTIMOS™ 3 N-CHANNEL POWER MOSFET 80 V ; PQFN 3.3 X 3.3 PACKAGE; 34 MOHM;

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DocumentsMOSFET OptiMOS™ and StrongIRFET™BSZ340N08NS3 G+4
BSZ340N08NS3GATMA1
Discrete Semiconductor Products

BSZ340N08NS3GATMA1

Active
INFINEON

OPTIMOS™ 3 N-CHANNEL POWER MOSFET 80 V ; PQFN 3.3 X 3.3 PACKAGE; 34 MOHM;

Deep-Dive with AI

DocumentsMOSFET OptiMOS™ and StrongIRFET™BSZ340N08NS3 G+4

Technical Specifications

Parameters and characteristics for this part

SpecificationBSZ340N08NS3GATMA1
Current - Continuous Drain (Id) @ 25°C6 A, 23 A
Drain to Source Voltage (Vdss)80 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 6 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs9.1 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]630 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerTDFN
Power Dissipation (Max)32 W
Power Dissipation (Max)2.1 W
Rds On (Max) @ Id, Vgs34 mOhm
Supplier Device PackagePG-TSDSON-8
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3.5 V

OptiMOS 3 Series

PartPower Dissipation (Max)Input Capacitance (Ciss) (Max) @ Vds [Max]Drain to Source Voltage (Vdss)FET TypeVgs (Max)Vgs(th) (Max) @ IdTechnologyGate Charge (Qg) (Max) @ VgsMounting TypeOperating Temperature [Max]Operating Temperature [Min]Current - Continuous Drain (Id) @ 25°CRds On (Max) @ Id, VgsPackage / CaseDrive Voltage (Max Rds On, Min Rds On)Supplier Device PackageGate Charge (Qg) (Max) @ Vgs [Max]Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Power Dissipation (Max)
PG-TO263-3
INFINEON
IPB038N12N3GATMA1
300 W
13800 pF
120 V
N-Channel
20 V
4 V
MOSFET (Metal Oxide)
211 nC
Surface Mount
175 °C
-55 °C
120 A
3.8 mOhm
D2PAK (2 Leads + Tab)
TO-263-3
TO-263AB
10 V
8-Power TDFN
INFINEON
BSZ42DN25NS3GATMA1
33.8 W
430 pF
250 V
N-Channel
20 V
4 V
MOSFET (Metal Oxide)
5.5 nC
Surface Mount
150 °C
-55 °C
5 A
425 mOhm
8-PowerTDFN
10 V
PG-TSDSON-8-2
TO252-3
INFINEON
IPD600N25N3GATMA1
136 W
2350 pF
250 V
N-Channel
20 V
4 V
MOSFET (Metal Oxide)
Surface Mount
175 °C
-55 °C
25 A
60 mOhm
DPAK (2 Leads + Tab)
SC-63
TO-252-3
10 V
PG-TO252-3
29 nC
BSC093N04LSGATMA1
INFINEON
BSC093N04LSGATMA1
2.5 W
35 W
1900 pF
40 V
N-Channel
20 V
2 V
MOSFET (Metal Oxide)
Surface Mount
150 °C
-55 °C
13 A
49 A
9.3 mOhm
8-PowerTDFN
4.5 V
10 V
PG-TDSON-8-5
24 nC
INFINEON IPP100N12S305AKSA1
INFINEON
IPP057N08N3GXKSA1
150 W
80 V
N-Channel
20 V
3.5 V
MOSFET (Metal Oxide)
69 nC
Through Hole
175 °C
-55 °C
5.7 mOhm
TO-220-3
6 V
10 V
PG-TO220-3
TO252-3
INFINEON
IPD068N10N3GATMA1
150 W
4910 pF
100 V
N-Channel
20 V
3.5 V
MOSFET (Metal Oxide)
68 nC
Surface Mount
175 °C
-55 °C
90 A
6.8 mOhm
DPAK (2 Leads + Tab)
SC-63
TO-252-3
6 V
10 V
PG-TO252-3
TO-220-3
INFINEON
IPP032N06N3GXKSA1
188 W
13000 pF
60 V
N-Channel
20 V
4 V
MOSFET (Metal Oxide)
Through Hole
175 °C
-55 °C
120 A
3.2 mOhm
TO-220-3
10 V
PG-TO220-3
165 nC
INFINEON BSC042NE7NS3GATMA1
INFINEON
BSC060N10NS3GATMA1
125 W
100 V
N-Channel
20 V
3.5 V
MOSFET (Metal Oxide)
68 nC
Surface Mount
150 °C
-55 °C
14.9 A
90 A
6 mOhm
8-PowerTDFN
6 V
10 V
PG-TDSON-8-1
4900 pF
BSC160N10NS3GATMA1
INFINEON
BSC160N10NS3GATMA1
60 W
1700 pF
100 V
N-Channel
20 V
3.5 V
MOSFET (Metal Oxide)
25 nC
Surface Mount
150 °C
-55 °C
8.8 A
42 A
16 mOhm
8-PowerTDFN
6 V
10 V
PG-TDSON-8-1
BSZ340N08NS3GATMA1
INFINEON
BSZ340N08NS3GATMA1
630 pF
80 V
N-Channel
20 V
3.5 V
MOSFET (Metal Oxide)
9.1 nC
Surface Mount
150 °C
-55 °C
6 A
23 A
34 mOhm
8-PowerTDFN
6 V
10 V
PG-TSDSON-8
32 W
2.1 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 25783$ 0.50
MouserN/A 1$ 0.42
10$ 0.38
100$ 0.34
500$ 0.32
1000$ 0.28
2500$ 0.27
5000$ 0.26
NewarkEach 1$ 0.47
10$ 0.43
100$ 0.39
500$ 0.32
1000$ 0.28
2500$ 0.28
10000$ 0.27

Description

General part information

OptiMOS 3 Series

The BSZ340N08NS3 G is a N-channel Power MOSFET with performance leading benchmark OptiMOS™ technology. It is the market leader in highly efficient solutions for power generation, power supply and power consumption applications.