Discrete Semiconductor Products

BSC160N10NS3GATMA1

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INFINEON

OPTIMOS™ 3 N-CHANNEL POWER MOSFET 100 V ; SUPERSO8 5X6 PACKAGE; 16 MOHM;

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DocumentsBSC160N10NS3GATMA1 | Datasheet

Discrete Semiconductor Products

BSC160N10NS3GATMA1

Active

INFINEON

OPTIMOS™ 3 N-CHANNEL POWER MOSFET 100 V ; SUPERSO8 5X6 PACKAGE; 16 MOHM;

Deep-Dive with AI

DocumentsBSC160N10NS3GATMA1 | Datasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	BSC160N10NS3GATMA1

Current - Continuous Drain (Id) @ 25°C	42 A, 8.8 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 6 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	25 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1700 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	60 W
Rds On (Max) @ Id, Vgs	16 mOhm
Supplier Device Package	PG-TDSON-8-1
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

OptiMOS 3 Series

Part	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drain to Source Voltage (Vdss)	FET Type	Vgs (Max)	Vgs(th) (Max) @ Id	Technology	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Power Dissipation (Max)
INFINEON IPB038N12N3GATMA1	300 W	13800 pF	120 V	N-Channel	20 V	4 V	MOSFET (Metal Oxide)	211 nC	Surface Mount	175 °C	-55 °C	120 A	3.8 mOhm	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	10 V
INFINEON BSZ42DN25NS3GATMA1	33.8 W	430 pF	250 V	N-Channel	20 V	4 V	MOSFET (Metal Oxide)	5.5 nC	Surface Mount	150 °C	-55 °C	5 A	425 mOhm	8-PowerTDFN	10 V	PG-TSDSON-8-2
INFINEON IPD600N25N3GATMA1	136 W	2350 pF	250 V	N-Channel	20 V	4 V	MOSFET (Metal Oxide)		Surface Mount	175 °C	-55 °C	25 A	60 mOhm	DPAK (2 Leads + Tab) SC-63 TO-252-3	10 V	PG-TO252-3	29 nC
INFINEON BSC093N04LSGATMA1	2.5 W 35 W	1900 pF	40 V	N-Channel	20 V	2 V	MOSFET (Metal Oxide)		Surface Mount	150 °C	-55 °C	13 A 49 A	9.3 mOhm	8-PowerTDFN	4.5 V 10 V	PG-TDSON-8-5	24 nC
INFINEON IPP057N08N3GXKSA1	150 W		80 V	N-Channel	20 V	3.5 V	MOSFET (Metal Oxide)	69 nC	Through Hole	175 °C	-55 °C		5.7 mOhm	TO-220-3	6 V 10 V	PG-TO220-3
INFINEON IPD068N10N3GATMA1	150 W	4910 pF	100 V	N-Channel	20 V	3.5 V	MOSFET (Metal Oxide)	68 nC	Surface Mount	175 °C	-55 °C	90 A	6.8 mOhm	DPAK (2 Leads + Tab) SC-63 TO-252-3	6 V 10 V	PG-TO252-3
INFINEON IPP032N06N3GXKSA1	188 W	13000 pF	60 V	N-Channel	20 V	4 V	MOSFET (Metal Oxide)		Through Hole	175 °C	-55 °C	120 A	3.2 mOhm	TO-220-3	10 V	PG-TO220-3	165 nC
INFINEON BSC060N10NS3GATMA1	125 W		100 V	N-Channel	20 V	3.5 V	MOSFET (Metal Oxide)	68 nC	Surface Mount	150 °C	-55 °C	14.9 A 90 A	6 mOhm	8-PowerTDFN	6 V 10 V	PG-TDSON-8-1		4900 pF
INFINEON BSC160N10NS3GATMA1	60 W	1700 pF	100 V	N-Channel	20 V	3.5 V	MOSFET (Metal Oxide)	25 nC	Surface Mount	150 °C	-55 °C	8.8 A 42 A	16 mOhm	8-PowerTDFN	6 V 10 V	PG-TDSON-8-1
INFINEON BSZ340N08NS3GATMA1		630 pF	80 V	N-Channel	20 V	3.5 V	MOSFET (Metal Oxide)	9.1 nC	Surface Mount	150 °C	-55 °C	6 A 23 A	34 mOhm	8-PowerTDFN	6 V 10 V	PG-TSDSON-8			32 W	2.1 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	44052	$ 1.62
Mouser	N/A	1	$ 1.35
		10	$ 0.95
		100	$ 0.74
		500	$ 0.62
		1000	$ 0.51
		2500	$ 0.48
		5000	$ 0.46
Newark	Each (Supplied on Full Reel)	5000	$ 0.57

Description

General part information

OptiMOS 3 Series

Infineon's 100 V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both RDS(on)and FOM (figure of merit).

Documents

Technical documentation and resources

BSC160N10NS3GATMA1 | Datasheet

Datasheet