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PG-TO263-3
Discrete Semiconductor Products

IPB038N12N3GATMA1

Active
INFINEON

POWER MOSFET, N CHANNEL, 120 V, 120 A, 0.0032 OHM, TO-263 (D2PAK), SURFACE MOUNT

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DocumentsDatasheetApplication Note EN+1
PG-TO263-3
Discrete Semiconductor Products

IPB038N12N3GATMA1

Active
INFINEON

POWER MOSFET, N CHANNEL, 120 V, 120 A, 0.0032 OHM, TO-263 (D2PAK), SURFACE MOUNT

Deep-Dive with AI

DocumentsDatasheetApplication Note EN+1

Technical Specifications

Parameters and characteristics for this part

SpecificationIPB038N12N3GATMA1
Current - Continuous Drain (Id) @ 25°C120 A
Drain to Source Voltage (Vdss)120 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs211 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]13800 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)300 W
Rds On (Max) @ Id, Vgs3.8 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

OptiMOS 3 Series

PartPower Dissipation (Max)Input Capacitance (Ciss) (Max) @ Vds [Max]Drain to Source Voltage (Vdss)FET TypeVgs (Max)Vgs(th) (Max) @ IdTechnologyGate Charge (Qg) (Max) @ VgsMounting TypeOperating Temperature [Max]Operating Temperature [Min]Current - Continuous Drain (Id) @ 25°CRds On (Max) @ Id, VgsPackage / CaseDrive Voltage (Max Rds On, Min Rds On)Supplier Device PackageGate Charge (Qg) (Max) @ Vgs [Max]Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Power Dissipation (Max)
PG-TO263-3
INFINEON
IPB038N12N3GATMA1
300 W
13800 pF
120 V
N-Channel
20 V
4 V
MOSFET (Metal Oxide)
211 nC
Surface Mount
175 °C
-55 °C
120 A
3.8 mOhm
D2PAK (2 Leads + Tab)
TO-263-3
TO-263AB
10 V
8-Power TDFN
INFINEON
BSZ42DN25NS3GATMA1
33.8 W
430 pF
250 V
N-Channel
20 V
4 V
MOSFET (Metal Oxide)
5.5 nC
Surface Mount
150 °C
-55 °C
5 A
425 mOhm
8-PowerTDFN
10 V
PG-TSDSON-8-2
TO252-3
INFINEON
IPD600N25N3GATMA1
136 W
2350 pF
250 V
N-Channel
20 V
4 V
MOSFET (Metal Oxide)
Surface Mount
175 °C
-55 °C
25 A
60 mOhm
DPAK (2 Leads + Tab)
SC-63
TO-252-3
10 V
PG-TO252-3
29 nC
BSC093N04LSGATMA1
INFINEON
BSC093N04LSGATMA1
2.5 W
35 W
1900 pF
40 V
N-Channel
20 V
2 V
MOSFET (Metal Oxide)
Surface Mount
150 °C
-55 °C
13 A
49 A
9.3 mOhm
8-PowerTDFN
4.5 V
10 V
PG-TDSON-8-5
24 nC
INFINEON IPP100N12S305AKSA1
INFINEON
IPP057N08N3GXKSA1
150 W
80 V
N-Channel
20 V
3.5 V
MOSFET (Metal Oxide)
69 nC
Through Hole
175 °C
-55 °C
5.7 mOhm
TO-220-3
6 V
10 V
PG-TO220-3
TO252-3
INFINEON
IPD068N10N3GATMA1
150 W
4910 pF
100 V
N-Channel
20 V
3.5 V
MOSFET (Metal Oxide)
68 nC
Surface Mount
175 °C
-55 °C
90 A
6.8 mOhm
DPAK (2 Leads + Tab)
SC-63
TO-252-3
6 V
10 V
PG-TO252-3
TO-220-3
INFINEON
IPP032N06N3GXKSA1
188 W
13000 pF
60 V
N-Channel
20 V
4 V
MOSFET (Metal Oxide)
Through Hole
175 °C
-55 °C
120 A
3.2 mOhm
TO-220-3
10 V
PG-TO220-3
165 nC
INFINEON BSC042NE7NS3GATMA1
INFINEON
BSC060N10NS3GATMA1
125 W
100 V
N-Channel
20 V
3.5 V
MOSFET (Metal Oxide)
68 nC
Surface Mount
150 °C
-55 °C
14.9 A
90 A
6 mOhm
8-PowerTDFN
6 V
10 V
PG-TDSON-8-1
4900 pF
BSC160N10NS3GATMA1
INFINEON
BSC160N10NS3GATMA1
60 W
1700 pF
100 V
N-Channel
20 V
3.5 V
MOSFET (Metal Oxide)
25 nC
Surface Mount
150 °C
-55 °C
8.8 A
42 A
16 mOhm
8-PowerTDFN
6 V
10 V
PG-TDSON-8-1
BSZ340N08NS3GATMA1
INFINEON
BSZ340N08NS3GATMA1
630 pF
80 V
N-Channel
20 V
3.5 V
MOSFET (Metal Oxide)
9.1 nC
Surface Mount
150 °C
-55 °C
6 A
23 A
34 mOhm
8-PowerTDFN
6 V
10 V
PG-TSDSON-8
32 W
2.1 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 6.11
10$ 4.11
100$ 2.97
500$ 2.48
Digi-Reel® 1$ 6.11
10$ 4.11
100$ 2.97
500$ 2.48
N/A 0$ 4.10
Tape & Reel (TR) 1000$ 2.48
MouserN/A 1$ 3.60
10$ 2.48
25$ 2.47
100$ 1.87
500$ 1.53
1000$ 1.42
NewarkEach (Supplied on Cut Tape) 1$ 4.92
10$ 3.60
25$ 3.59
50$ 3.17
100$ 2.76
250$ 2.71

Description

General part information

OptiMOS 3 Series

The IPB038N12N3 G is an OptiMOS™ N-channel Power MOSFET offers at the same time the lowest ON-state resistances of the industry and the fastest switching behaviour, allowing for the achievement of outstanding performance in a wide range of applications. The 120V OptiMOS™ technology gives new possibilities for optimized solutions.