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ONSEMI FOD817C3S
Isolators

FOD817C3S

Active
ON Semiconductor

OPTOCOUPLER, TRANSISTOR OUTPUT, 1 CHANNEL, SURFACE MOUNT DIP, 4 PINS, 50 MA, 5 KV, 200 %

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ONSEMI FOD817C3S
Isolators

FOD817C3S

Active
ON Semiconductor

OPTOCOUPLER, TRANSISTOR OUTPUT, 1 CHANNEL, SURFACE MOUNT DIP, 4 PINS, 50 MA, 5 KV, 200 %

Technical Specifications

Parameters and characteristics for this part

SpecificationFOD817C3S
Current - DC Forward (If) (Max)50 mA
Current - Output / Channel50 mA
Current Transfer Ratio (Max)400 %
Current Transfer Ratio (Min) [Min]200 %
Input TypeDC
Mounting TypeSurface Mount
Number of Channels1
Operating Temperature [Max]110 °C
Operating Temperature [Min]-55 °C
Output Type1.81 mOhm
Package / Case4-SMD, Gull Wing
Rise / Fall Time (Typ) [custom]3 µs
Rise / Fall Time (Typ) [custom]4 µs
Supplier Device Package4-SMD
Vce Saturation (Max)200 mV
Voltage - Output (Max) [Max]70 V

FOD817D Series

4-Pin DIP Phototransistor Optocouplers

PartOutput TypeCurrent Transfer Ratio (Min) [Min]Operating Temperature [Min]Operating Temperature [Max]Supplier Device PackageNumber of ChannelsCurrent - DC Forward (If) (Max)Package / CaseVce Saturation (Max)Voltage - Output (Max) [Max]Current - Output / ChannelInput TypeCurrent Transfer Ratio (Max)Mounting TypeRise / Fall Time (Typ) [custom]Rise / Fall Time (Typ) [custom]Current Transfer Ratio (Max) [Max]
ONSEMI FOD817C3S
ON Semiconductor
1.81 mOhm
200 %
-55 °C
110 °C
4-SMD
1
50 mA
4-SMD
Gull Wing
200 mV
70 V
50 mA
DC
400 %
Surface Mount
3 µs
4 µs
4-SMD
ON Semiconductor
1.81 mOhm
300 %
-55 °C
110 °C
4-SMD
1
50 mA
4-SMD
Gull Wing
200 mV
70 V
50 mA
DC
Surface Mount
3 µs
4 µs
600 %
ON Semiconductor
ONSEMI FOD817ASD
ON Semiconductor
1.81 mOhm
80 %
-55 °C
110 °C
4-SMD
1
50 mA
4-SMD
Gull Wing
200 mV
70 V
50 mA
DC
Surface Mount
3 µs
4 µs
160 %
4-DIP(SMD)
ON Semiconductor
1.81 mOhm
50 %
-55 °C
110 °C
4-SMD
1
50 mA
4-SMD
Gull Wing
200 mV
70 V
50 mA
DC
Surface Mount
3 µs
4 µs
600 %
FOD814A
ON Semiconductor
1.81 mOhm
300 %
-55 °C
110 °C
4-DIP
1
50 mA
4-DIP (0.300"
7.62mm)
200 mV
70 V
50 mA
DC
Through Hole
3 µs
4 µs
600 %
4-SMD
ON Semiconductor
1.81 mOhm
80 %
-55 °C
110 °C
4-SMD
1
50 mA
4-SMD
Gull Wing
200 mV
70 V
50 mA
DC
Surface Mount
3 µs
4 µs
160 %
4-DIP
ON Semiconductor
1.81 mOhm
50 %
-55 °C
110 °C
4-DIP
1
50 mA
4-DIP (0.300"
7.62mm)
200 mV
70 V
50 mA
DC
Through Hole
3 µs
4 µs
600 %
ONSEMI FOD817D.
ON Semiconductor
1.81 mOhm
300 %
-55 °C
110 °C
4-DIP
1
50 mA
4-DIP (0.300"
7.62mm)
200 mV
70 V
50 mA
DC
Through Hole
3 µs
4 µs
600 %
4-DIP 10.16MM
ON Semiconductor
1.81 mOhm
50 %
-55 °C
110 °C
4-DIP
1
50 mA
4-DIP
200 mV
70 V
50 mA
DC
Through Hole
3 µs
4 µs
600 %

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 0.50
10$ 0.31
100$ 0.18
1000$ 0.14
2000$ 0.13
6000$ 0.12
10000$ 0.11
26000$ 0.10
NewarkEach 1000$ 0.13
2500$ 0.11
10000$ 0.10
25000$ 0.10
ON SemiconductorN/A 1$ 0.10

Description

General part information

FOD817D Series

The FOD814 consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a silicon phototransistor output in a 4-pin dual in-line package. The FOD817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package.