Specification	FOD817D300

Current - DC Forward (If) (Max)	50 mA
Current - Output / Channel	50 mA
Current Transfer Ratio (Max) [Max]	600 %
Current Transfer Ratio (Min) [Min]	300 %
Input Type	DC
Mounting Type	Through Hole
Number of Channels	1
Operating Temperature [Max]	110 °C
Operating Temperature [Min]	-55 °C
Output Type	1.81 mOhm
Package / Case	4-DIP (0.300", 7.62mm)
Rise / Fall Time (Typ) [custom]	3 µs
Rise / Fall Time (Typ) [custom]	4 µs
Supplier Device Package	4-DIP
Vce Saturation (Max)	200 mV
Voltage - Output (Max) [Max]	70 V

FOD817D Series

4-Pin DIP Phototransistor Optocouplers

Part	Output Type	Current Transfer Ratio (Min) [Min]	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Number of Channels	Current - DC Forward (If) (Max)	Package / Case	Vce Saturation (Max)	Voltage - Output (Max) [Max]	Current - Output / Channel	Input Type	Current Transfer Ratio (Max)	Mounting Type	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Current Transfer Ratio (Max) [Max]
ON Semiconductor FOD817C3S	1.81 mOhm	200 %	-55 °C	110 °C	4-SMD	1	50 mA	4-SMD Gull Wing	200 mV	70 V	50 mA	DC	400 %	Surface Mount	3 µs	4 µs
ON Semiconductor FOD817DS	1.81 mOhm	300 %	-55 °C	110 °C	4-SMD	1	50 mA	4-SMD Gull Wing	200 mV	70 V	50 mA	DC		Surface Mount	3 µs	4 µs	600 %
ON Semiconductor FOD817ASD_F117
ON Semiconductor FOD817A3SD	1.81 mOhm	80 %	-55 °C	110 °C	4-SMD	1	50 mA	4-SMD Gull Wing	200 mV	70 V	50 mA	DC		Surface Mount	3 µs	4 µs	160 %
ON Semiconductor FOD8173SD	1.81 mOhm	50 %	-55 °C	110 °C	4-SMD	1	50 mA	4-SMD Gull Wing	200 mV	70 V	50 mA	DC		Surface Mount	3 µs	4 µs	600 %
ON Semiconductor FOD817D300	1.81 mOhm	300 %	-55 °C	110 °C	4-DIP	1	50 mA	4-DIP (0.300" 7.62mm)	200 mV	70 V	50 mA	DC		Through Hole	3 µs	4 µs	600 %
ON Semiconductor FOD817A3S	1.81 mOhm	80 %	-55 °C	110 °C	4-SMD	1	50 mA	4-SMD Gull Wing	200 mV	70 V	50 mA	DC		Surface Mount	3 µs	4 µs	160 %
ON Semiconductor FOD817300	1.81 mOhm	50 %	-55 °C	110 °C	4-DIP	1	50 mA	4-DIP (0.300" 7.62mm)	200 mV	70 V	50 mA	DC		Through Hole	3 µs	4 µs	600 %
ON Semiconductor FOD817D	1.81 mOhm	300 %	-55 °C	110 °C	4-DIP	1	50 mA	4-DIP (0.300" 7.62mm)	200 mV	70 V	50 mA	DC		Through Hole	3 µs	4 µs	600 %
ON Semiconductor FOD817300W	1.81 mOhm	50 %	-55 °C	110 °C	4-DIP	1	50 mA	4-DIP	200 mV	70 V	50 mA	DC		Through Hole	3 µs	4 µs	600 %

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	2392	$ 0.13
Newark	Each	1000	$ 0.14
		2500	$ 0.13
		10000	$ 0.12
		25000	$ 0.11
ON Semiconductor	N/A	1	$ 0.12

Description

General part information

FOD817D Series

The FOD814 consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a silicon phototransistor output in a 4-pin dual in-line package. The FOD817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package.

Documents

Technical documentation and resources

Package Drawing-646CD-PDIP4 4.6x6.5, 2.54P

Package Drawing

Datasheet

Technical Data Sheet EN

Datasheet

Product Change Notice EN

Datasheet