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Technical Specifications
Parameters and characteristics for this part
| Specification | APTC60HM35T3G |
|---|---|
| Configuration | 4 N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 72 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Input Capacitance (Ciss) (Max) @ Vds | 14000 pF |
| Mounting Type | Chassis Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | SP3 |
| Power - Max [Max] | 416 W |
| Rds On (Max) @ Id, Vgs | 35 mOhm |
| Supplier Device Package | SP3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 3.9 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 9 | $ 151.69 | |
| 100 | $ 108.35 | |||
Description
General part information
APTC60TAM21SCTPAG-Module Series
* Super junction MOSFET
* Ultra low RDSon
* Low Miller capacitance
Documents
Technical documentation and resources