APTC60TAM21SCTPAG-Module Series

600V/Full bridge + series FRED and SiC parallel diodes

Catalog

600V/Full bridge + series FRED and SiC parallel diodes

Part	Package / Case	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Power - Max [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Configuration	Supplier Device Package	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Technology	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Vgs (Max)	Power Dissipation (Max)	Configuration	Gate Charge (Qg) (Max) @ Vgs
Microchip Technology APTC60VDAM24T3G	SP3	3.9 V	600 V	462 W	150 °C	-40 °C	95 A	24 mOhm	300 nC	2 N-Channel (Dual)	SP3	Chassis Mount	14400 pF	MOSFET (Metal Oxide)
Microchip Technology APTC60TAM21SCTPAG	Module	3.6 V	600 V	625 W	150 °C	-40 °C	116 A	21 mOhm	580 nC	6 N-Channel (3-Phase Bridge)	SP6-P	Chassis Mount	13000 pF	MOSFET (Metal Oxide)
Microchip Technology APTC60TAM35PG	SP6	3.9 V	600 V	416 W	150 °C	-40 °C	72 A	35 mOhm		6 N-Channel (3-Phase Bridge)	SP6-P	Chassis Mount	14000 pF	MOSFET (Metal Oxide)
Microchip Technology APTC60AM35T1G	SP1	3.9 V	600 V	416 W	150 °C	-40 °C	72 A	35 mOhm		2 N-Channel (Half Bridge)	SP1	Chassis Mount	14000 pF	MOSFET (Metal Oxide)
Microchip Technology APTC60SKM24CT1G	SP1	3.9 V	600 V		150 °C	-40 °C	95 A	24 mOhm	300 nC		SP1	Chassis Mount	14400 pF	MOSFET (Metal Oxide)	10 V	N-Channel	20 V	462 W
Microchip Technology APTC60HM35T3G	SP3	3.9 V	600 V	416 W	150 °C	-40 °C	72 A	35 mOhm			SP3	Chassis Mount	14000 pF	MOSFET (Metal Oxide)					4 N-Channel
Microchip Technology APTC60AM45B1G	SP1	3.9 V	600 V	250 W	150 °C	-40 °C	49 A	45 mOhm		3 N Channel (Phase Leg + Boost Chopper)	SP1	Chassis Mount	7200 pF	MOSFET (Metal Oxide)						150 nC
Microchip Technology APTC60SKM24T1G	SP1	3.9 V	600 V		150 °C	-40 °C	95 A	24 mOhm	300 nC		SP1	Chassis Mount	14400 pF	MOSFET (Metal Oxide)	10 V	N-Channel	20 V	462 W
Microchip Technology APTC60DAM18CTG	SP4	3.9 V	600 V		150 °C	-40 °C	143 A	18 mOhm			SP4	Chassis Mount	28000 pF	MOSFET (Metal Oxide)	10 V	N-Channel	30 V	833 W		1036 nC
Microchip Technology APTC60HM45SCTG	SP4	3.9 V	600 V	250 W	150 °C	-40 °C	49 A	45 mOhm			SP4	Chassis Mount	7200 pF	MOSFET (Metal Oxide)					4 N-Channel	150 nC

Catalog

600V/Full bridge + series FRED and SiC parallel diodes

Key Features

- Configuration: Full bridge + series FRED and SiC parallel diodes

- VDSS (V): 600

- RDSon (mR) typ: 45

- Current (A) Tc=80C: 38

- Silicon type: Super Junction MOSFET/SiC Diode

- Package: SP4

Description

* Super junction MOSFET * Ultra low RDSon * Low Miller capacitance * Ultra low gate charge * Avalanche energy rated * FRED Si diode * Ultra fast recovery times * Soft recovery characteristics * High blocking voltage * High current * Low leakage current * Low stray inductance * Kelvin source for easy drive * Low stray inductance * Internal thermistor for temperature monitoring (optional) * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * RoHS Compliant