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Discrete Semiconductor Products
APTC60TAM21SCTPAG
ActiveMicrochip Technology
600V/TRIPLE PHASE LEG/SI MOSFET MODULES
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Discrete Semiconductor Products
APTC60TAM21SCTPAG
ActiveMicrochip Technology
600V/TRIPLE PHASE LEG/SI MOSFET MODULES
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | APTC60TAM21SCTPAG |
|---|---|
| Configuration | 6 N-Channel (3-Phase Bridge) |
| Current - Continuous Drain (Id) @ 25°C | 116 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 580 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 13000 pF |
| Mounting Type | Chassis Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | Module |
| Power - Max [Max] | 625 W |
| Rds On (Max) @ Id, Vgs | 21 mOhm |
| Supplier Device Package | SP6-P |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 3.6 V |
APTC60TAM21SCTPAG-Module Series
600V/Full bridge + series FRED and SiC parallel diodes
| Part | Package / Case | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Power - Max [Max] | Operating Temperature [Max] | Operating Temperature [Min] | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs [Max] | Configuration | Supplier Device Package | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds | Technology | Drive Voltage (Max Rds On, Min Rds On) | FET Type | Vgs (Max) | Power Dissipation (Max) | Configuration | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microchip Technology | SP3 | 3.9 V | 600 V | 462 W | 150 °C | -40 °C | 95 A | 24 mOhm | 300 nC | 2 N-Channel (Dual) | SP3 | Chassis Mount | 14400 pF | MOSFET (Metal Oxide) | ||||||
Microchip Technology | Module | 3.6 V | 600 V | 625 W | 150 °C | -40 °C | 116 A | 21 mOhm | 580 nC | 6 N-Channel (3-Phase Bridge) | SP6-P | Chassis Mount | 13000 pF | MOSFET (Metal Oxide) | ||||||
Microchip Technology | SP6 | 3.9 V | 600 V | 416 W | 150 °C | -40 °C | 72 A | 35 mOhm | 6 N-Channel (3-Phase Bridge) | SP6-P | Chassis Mount | 14000 pF | MOSFET (Metal Oxide) | |||||||
Microchip Technology | SP1 | 3.9 V | 600 V | 416 W | 150 °C | -40 °C | 72 A | 35 mOhm | 2 N-Channel (Half Bridge) | SP1 | Chassis Mount | 14000 pF | MOSFET (Metal Oxide) | |||||||
Microchip Technology | SP1 | 3.9 V | 600 V | 150 °C | -40 °C | 95 A | 24 mOhm | 300 nC | SP1 | Chassis Mount | 14400 pF | MOSFET (Metal Oxide) | 10 V | N-Channel | 20 V | 462 W | ||||
Microchip Technology | SP3 | 3.9 V | 600 V | 416 W | 150 °C | -40 °C | 72 A | 35 mOhm | SP3 | Chassis Mount | 14000 pF | MOSFET (Metal Oxide) | 4 N-Channel | |||||||
Microchip Technology | SP1 | 3.9 V | 600 V | 250 W | 150 °C | -40 °C | 49 A | 45 mOhm | 3 N Channel (Phase Leg + Boost Chopper) | SP1 | Chassis Mount | 7200 pF | MOSFET (Metal Oxide) | 150 nC | ||||||
Microchip Technology | SP1 | 3.9 V | 600 V | 150 °C | -40 °C | 95 A | 24 mOhm | 300 nC | SP1 | Chassis Mount | 14400 pF | MOSFET (Metal Oxide) | 10 V | N-Channel | 20 V | 462 W | ||||
Microchip Technology | SP4 | 3.9 V | 600 V | 150 °C | -40 °C | 143 A | 18 mOhm | SP4 | Chassis Mount | 28000 pF | MOSFET (Metal Oxide) | 10 V | N-Channel | 30 V | 833 W | 1036 nC | ||||
Microchip Technology | SP4 | 3.9 V | 600 V | 250 W | 150 °C | -40 °C | 49 A | 45 mOhm | SP4 | Chassis Mount | 7200 pF | MOSFET (Metal Oxide) | 4 N-Channel | 150 nC |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 3 | $ 533.21 | |
| Microchip Direct | N/A | 1 | $ 533.21 | |
| 50 | $ 441.81 | |||
| 100 | $ 396.09 | |||
| 250 | $ 380.87 | |||
| 500 | $ 335.16 | |||
| 1000 | $ 304.70 | |||
| 5000 | $ 268.12 | |||
Description
General part information
APTC60TAM21SCTPAG-Module Series
* Super junction MOSFET
* Ultra low RDSon
* Low Miller capacitance