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Discrete Semiconductor Products

APTC60TAM21SCTPAG

Active
Microchip Technology

600V/TRIPLE PHASE LEG/SI MOSFET MODULES

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Discrete Semiconductor Products

APTC60TAM21SCTPAG

Active
Microchip Technology

600V/TRIPLE PHASE LEG/SI MOSFET MODULES

Technical Specifications

Parameters and characteristics for this part

SpecificationAPTC60TAM21SCTPAG
Configuration6 N-Channel (3-Phase Bridge)
Current - Continuous Drain (Id) @ 25°C116 A
Drain to Source Voltage (Vdss)600 V
Gate Charge (Qg) (Max) @ Vgs [Max]580 nC
Input Capacitance (Ciss) (Max) @ Vds13000 pF
Mounting TypeChassis Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-40 °C
Package / CaseModule
Power - Max [Max]625 W
Rds On (Max) @ Id, Vgs21 mOhm
Supplier Device PackageSP6-P
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id3.6 V

APTC60TAM21SCTPAG-Module Series

600V/Full bridge + series FRED and SiC parallel diodes

PartPackage / CaseVgs(th) (Max) @ IdDrain to Source Voltage (Vdss)Power - Max [Max]Operating Temperature [Max]Operating Temperature [Min]Current - Continuous Drain (Id) @ 25°CRds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ Vgs [Max]ConfigurationSupplier Device PackageMounting TypeInput Capacitance (Ciss) (Max) @ VdsTechnologyDrive Voltage (Max Rds On, Min Rds On)FET TypeVgs (Max)Power Dissipation (Max)ConfigurationGate Charge (Qg) (Max) @ Vgs
Microchip Technology
SP3
3.9 V
600 V
462 W
150 °C
-40 °C
95 A
24 mOhm
300 nC
2 N-Channel (Dual)
SP3
Chassis Mount
14400 pF
MOSFET (Metal Oxide)
Microchip Technology
Module
3.6 V
600 V
625 W
150 °C
-40 °C
116 A
21 mOhm
580 nC
6 N-Channel (3-Phase Bridge)
SP6-P
Chassis Mount
13000 pF
MOSFET (Metal Oxide)
APT_SP6
Microchip Technology
SP6
3.9 V
600 V
416 W
150 °C
-40 °C
72 A
35 mOhm
6 N-Channel (3-Phase Bridge)
SP6-P
Chassis Mount
14000 pF
MOSFET (Metal Oxide)
Microchip Technology
SP1
3.9 V
600 V
416 W
150 °C
-40 °C
72 A
35 mOhm
2 N-Channel (Half Bridge)
SP1
Chassis Mount
14000 pF
MOSFET (Metal Oxide)
Microchip Technology
SP1
3.9 V
600 V
150 °C
-40 °C
95 A
24 mOhm
300 nC
SP1
Chassis Mount
14400 pF
MOSFET (Metal Oxide)
10 V
N-Channel
20 V
462 W
APTC60HM35T3G
Microchip Technology
SP3
3.9 V
600 V
416 W
150 °C
-40 °C
72 A
35 mOhm
SP3
Chassis Mount
14000 pF
MOSFET (Metal Oxide)
4 N-Channel
APTC60AM45BC1G
Microchip Technology
SP1
3.9 V
600 V
250 W
150 °C
-40 °C
49 A
45 mOhm
3 N Channel (Phase Leg + Boost Chopper)
SP1
Chassis Mount
7200 pF
MOSFET (Metal Oxide)
150 nC
APTC60SKM24T1G
Microchip Technology
SP1
3.9 V
600 V
150 °C
-40 °C
95 A
24 mOhm
300 nC
SP1
Chassis Mount
14400 pF
MOSFET (Metal Oxide)
10 V
N-Channel
20 V
462 W
APTC60DAM18CTG
Microchip Technology
SP4
3.9 V
600 V
150 °C
-40 °C
143 A
18 mOhm
SP4
Chassis Mount
28000 pF
MOSFET (Metal Oxide)
10 V
N-Channel
30 V
833 W
1036 nC
Microchip Technology
SP4
3.9 V
600 V
250 W
150 °C
-40 °C
49 A
45 mOhm
SP4
Chassis Mount
7200 pF
MOSFET (Metal Oxide)
4 N-Channel
150 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 3$ 533.21
Microchip DirectN/A 1$ 533.21
50$ 441.81
100$ 396.09
250$ 380.87
500$ 335.16
1000$ 304.70
5000$ 268.12

Description

General part information

APTC60TAM21SCTPAG-Module Series

* Super junction MOSFET

* Ultra low RDSon

* Low Miller capacitance