Zenode.ai Logo
Beta
TO-247-4
Discrete Semiconductor Products

IPZA60R180P7XKSA1

LTB
INFINEON

MOSFET N-CH 600V 18A TO247-4

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet
TO-247-4
Discrete Semiconductor Products

IPZA60R180P7XKSA1

LTB
INFINEON

MOSFET N-CH 600V 18A TO247-4

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationIPZA60R180P7XKSA1
Current - Continuous Drain (Id) @ 25°C18 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs25 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]1081 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-4
Power Dissipation (Max)72 W
Rds On (Max) @ Id, Vgs180 mOhm
Supplier Device PackagePG-TO247-4
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 5.27
470$ 5.27
Tube 1$ 5.15
10$ 3.43
240$ 2.20

Description

General part information

IPZA60 Series

N-Channel 600 V 18A (Tc) 72W (Tc) Through Hole PG-TO247-4

Documents

Technical documentation and resources