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AIMZA75R016M1HXKSA1
Discrete Semiconductor Products

IPZA60R120P7XKSA1

Obsolete
INFINEON

COOLMOS™ P7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; TO-247 4PIN PACKAGE; 120 MOHM; PRICE/PERFORMANCE

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AIMZA75R016M1HXKSA1
Discrete Semiconductor Products

IPZA60R120P7XKSA1

Obsolete
INFINEON

COOLMOS™ P7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; TO-247 4PIN PACKAGE; 120 MOHM; PRICE/PERFORMANCE

Technical Specifications

Parameters and characteristics for this part

SpecificationIPZA60R120P7XKSA1
Current - Continuous Drain (Id) @ 25°C26 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs36 nC
Input Capacitance (Ciss) (Max) @ Vds1544 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-4
Power Dissipation (Max)95 W
Rds On (Max) @ Id, Vgs120 mOhm
Supplier Device PackagePG-TO247-4
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.00
5920$ 0.00
MouserN/A 1$ 5.33
10$ 4.06
25$ 3.78
240$ 3.20
1200$ 3.14
2640$ 3.12
NewarkEach 1$ 4.86
10$ 3.62
25$ 3.46
50$ 3.32
100$ 3.16
480$ 3.15
720$ 2.88

Description

General part information

IPZA60 Series

The600V CoolMOS™ P7superjunction (SJ) MOSFET is the successor to the600V CoolMOS™ P6series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the CoolMOS™ 7th generation platform ensure its high efficiency.