Discrete Semiconductor Products

IPZA60R080P7XKSA1

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INFINEON

COOLMOS™ P7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; TO-247 4PIN PACKAGE; 80 MOHM; PRICE/PERFORMANCE

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DocumentsTechnical Data Sheet EN Datasheet

Discrete Semiconductor Products

IPZA60R080P7XKSA1

Active

INFINEON

COOLMOS™ P7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; TO-247 4PIN PACKAGE; 80 MOHM; PRICE/PERFORMANCE

Deep-Dive with AI

DocumentsTechnical Data Sheet EN Datasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPZA60R080P7XKSA1

Current - Continuous Drain (Id) @ 25°C	37 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	51 nC
Input Capacitance (Ciss) (Max) @ Vds	2180 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-4
Power Dissipation (Max)	129 W
Rds On (Max) @ Id, Vgs [Max]	80 mOhm
Supplier Device Package	PG-TO247-4
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

IPZA60 Series

Part	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Mounting Type	Technology	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	FET Type	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs [Max]
INFINEON IPZA60R024P7XKSA1	PG-TO247-4-3	164 nC	101 A	600 V	10 V	150 °C	-55 °C	TO-247-4	Through Hole	MOSFET (Metal Oxide)	24 mOhm	291 W	N-Channel	4 V	7144 pF	20 V
INFINEON IPZA60R120P7XKSA1	PG-TO247-4		26 A	600 V	10 V	150 °C	-55 °C	TO-247-4	Through Hole	MOSFET (Metal Oxide)	120 mOhm	95 W	N-Channel	4 V		20 V	1544 pF	36 nC
INFINEON IPZA60R037P7XKSA1	PG-TO247-4	121 nC	76 A	600 V	10 V	150 °C	-55 °C	TO-247-4	Through Hole	MOSFET (Metal Oxide)	37 mOhm	255 W	N-Channel	4 V		20 V	5243 pF
INFINEON IPZA60R080P7XKSA1	PG-TO247-4		37 A	600 V	10 V	150 °C	-55 °C	TO-247-4	Through Hole	MOSFET (Metal Oxide)		129 W	N-Channel	4 V		20 V	2180 pF	51 nC	80 mOhm
INFINEON IPZA60R180P7XKSA1	PG-TO247-4		18 A	600 V	10 V	150 °C	-55 °C	TO-247-4	Through Hole	MOSFET (Metal Oxide)	180 mOhm	72 W	N-Channel	4 V	1081 pF	20 V		25 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	153	$ 4.87
	Tube	1	$ 6.78
		10	$ 4.58
		100	$ 3.33
		500	$ 2.84
Newark	Each	1	$ 5.84
		10	$ 5.20
		25	$ 3.86
		50	$ 3.55
		100	$ 3.22
		480	$ 3.21
		720	$ 2.80

Description

General part information

IPZA60 Series

The600V CoolMOS™ P7superjunction (SJ) MOSFET is the successor to the600V CoolMOS™ P6series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the CoolMOS™ 7th generation platform ensure its high efficiency.

Documents

Technical documentation and resources

Technical Data Sheet EN

Datasheet