Discrete Semiconductor Products

PBSS5130PAP,115

Active

PBSS5130PAP - 30 V, 1 A PNP/PNP LOW VCESAT (BISS) TRANSISTOR@EN-US DFN 6-PIN

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

PBSS5130PAP - 30 V, 1 A PNP/PNP LOW VCESAT (BISS) TRANSISTOR@EN-US DFN 6-PIN

Technical Specifications

Parameters and characteristics for this part

Specification	PBSS5130PAP,115

Current - Collector (Ic) (Max) [Max]	1 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	170
Frequency - Transition	125 MHz
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	6-UFDFN Exposed Pad
Power - Max [Max]	510 mW
Qualification	AEC-Q100
Supplier Device Package	6-HUSON (2x2)
Transistor Type	2 PNP (Dual)
Vce Saturation (Max) @ Ib, Ic	280 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	30 V

Part	Package / Case	Qualification	Mounting Type	Frequency - Transition	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Supplier Device Package	Vce Saturation (Max) @ Ib, Ic	Power - Max [Max]	Operating Temperature	Transistor Type	Current - Collector (Ic) (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Grade	Voltage - Collector Emitter Breakdown (Max) [Max]
Freescale Semiconductor - NXP PBSS5130T,215	SC-59 SOT-23-3 TO-236-3	AEC-Q100	Surface Mount	200 MHz	260	TO-236AB	225 mV	480 mW	150 °C	PNP	1 A	100 nA	Automotive	30 V
Freescale Semiconductor - NXP PBSS5130PAP,115	6-UFDFN Exposed Pad	AEC-Q100	Surface Mount	125 MHz	170	6-HUSON (2x2)	280 mV	510 mW	150 °C	2 PNP (Dual)	1 A	100 nA	Automotive	30 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor Array 2 PNP (Dual) 30V 1A 125MHz 510mW Surface Mount 6-HUSON (2x2)

Technical documentation and resources