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SOT1118
Discrete Semiconductor Products

PBSS5130PAP,115

Active
Nexperia USA Inc.

30 V, 1 A PNP/PNP LOW VCESAT TRANSISTOR

SOT1118
Discrete Semiconductor Products

PBSS5130PAP,115

Active
Nexperia USA Inc.

30 V, 1 A PNP/PNP LOW VCESAT TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

SpecificationPBSS5130PAP,115
Current - Collector (Ic) (Max) [Max]1 A
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]170
Frequency - Transition125 MHz
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / Case6-UFDFN Exposed Pad
Power - Max [Max]510 mW
QualificationAEC-Q100
Supplier Device Package6-HUSON (2x2)
Transistor Type2 PNP (Dual)
Vce Saturation (Max) @ Ib, Ic280 mV
Voltage - Collector Emitter Breakdown (Max) [Max]30 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.52
10$ 0.45
100$ 0.31
500$ 0.24
1000$ 0.20
Digi-Reel® 1$ 0.52
10$ 0.45
100$ 0.31
500$ 0.24
1000$ 0.20
N/A 0$ 1.03
Tape & Reel (TR) 3000$ 0.15

Description

General part information

PBSS5130 Series

PNP/PNP low VCEsattransistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.