Specification	PBSS5130T,215

Current - Collector (Ic) (Max) [Max]	1 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	260
Frequency - Transition	200 MHz
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power - Max [Max]	480 mW
Qualification	AEC-Q100
Supplier Device Package	TO-236AB
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	225 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	30 V

PBSS5130 Series

30 V, 1 A PNP/PNP low VCEsat transistor

Part	Current - Collector Cutoff (Max) [Max]	Operating Temperature	Supplier Device Package	Power - Max [Max]	Frequency - Transition	Grade	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Package / Case	Mounting Type	Qualification	Vce Saturation (Max) @ Ib, Ic	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Transistor Type
Nexperia USA Inc. PBSS5130T,215	100 nA	150 °C	TO-236AB	480 mW	200 MHz	Automotive	1 A	30 V	SC-59 SOT-23-3 TO-236-3	Surface Mount	AEC-Q100	225 mV	260	PNP
Nexperia USA Inc. PBSS5130PAP,115	100 nA	150 °C	6-HUSON (2x2)	510 mW	125 MHz	Automotive	1 A	30 V	6-UFDFN Exposed Pad	Surface Mount	AEC-Q100	280 mV	170	2 PNP (Dual)
Nexperia USA Inc. PBSS5130QAZ	100 nA	150 °C	DFN1010D-3	325 mW	170 MHz		1 A	30 V	3-XDFN Exposed Pad	Surface Mount		240 mV	130	PNP

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

PNP/PNP low VCEsattransistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.

Technical documentation and resources