Discrete Semiconductor Products

PBSS5130QAZ

Obsolete

TRANS PNP 30V 1A DFN1010D-3

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Discrete Semiconductor Products

Obsolete

TRANS PNP 30V 1A DFN1010D-3

Technical Specifications

Parameters and characteristics for this part

Specification	PBSS5130QAZ

Current - Collector (Ic) (Max) [Max]	1 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	130
Frequency - Transition	170 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	3-XDFN Exposed Pad
Power - Max [Max]	325 mW
Supplier Device Package	DFN1010D-3
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	240 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	30 V

30 V, 1 A PNP/PNP low VCEsat transistor

Part	Current - Collector Cutoff (Max) [Max]	Operating Temperature	Supplier Device Package	Power - Max [Max]	Frequency - Transition	Grade	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Package / Case	Mounting Type	Qualification	Vce Saturation (Max) @ Ib, Ic	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Transistor Type
Nexperia USA Inc. PBSS5130T,215	100 nA	150 °C	TO-236AB	480 mW	200 MHz	Automotive	1 A	30 V	SC-59 SOT-23-3 TO-236-3	Surface Mount	AEC-Q100	225 mV	260	PNP
Nexperia USA Inc. PBSS5130PAP,115	100 nA	150 °C	6-HUSON (2x2)	510 mW	125 MHz	Automotive	1 A	30 V	6-UFDFN Exposed Pad	Surface Mount	AEC-Q100	280 mV	170	2 PNP (Dual)
Nexperia USA Inc. PBSS5130QAZ	100 nA	150 °C	DFN1010D-3	325 mW	170 MHz		1 A	30 V	3-XDFN Exposed Pad	Surface Mount		240 mV	130	PNP

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

PNP/PNP low VCEsattransistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.

Technical documentation and resources