Catalog
30 V, 1 A PNP/PNP low VCEsat transistor
Description
AI
PNP/PNP low VCEsattransistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
Beta
⌘K
30 V, 1 A PNP/PNP low VCEsat transistor
30 V, 1 A PNP/PNP low VCEsat transistor
| Part | Current - Collector Cutoff (Max) [Max] | Operating Temperature | Supplier Device Package | Power - Max [Max] | Frequency - Transition | Grade | Current - Collector (Ic) (Max) [Max] | Voltage - Collector Emitter Breakdown (Max) [Max] | Package / Case | Mounting Type | Qualification | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Transistor Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | 100 nA | 150 °C | TO-236AB | 480 mW | 200 MHz | Automotive | 1 A | 30 V | SC-59 SOT-23-3 TO-236-3 | Surface Mount | AEC-Q100 | 225 mV | 260 | PNP |
 Nexperia USA Inc. | 100 nA | 150 °C | 6-HUSON (2x2) | 510 mW | 125 MHz | Automotive | 1 A | 30 V | 6-UFDFN Exposed Pad | Surface Mount | AEC-Q100 | 280 mV | 170 | 2 PNP (Dual) |
 Nexperia USA Inc. | 100 nA | 150 °C | DFN1010D-3 | 325 mW | 170 MHz | 1 A | 30 V | 3-XDFN Exposed Pad | Surface Mount | 240 mV | 130 | PNP |