Discrete Semiconductor Products

EPC2110

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GANFET 2N-CH 120V 3.4A DIE

Discrete Semiconductor Products

Active

GANFET 2N-CH 120V 3.4A DIE

Technical Specifications

Parameters and characteristics for this part

Part	Input Capacitance (Ciss) (Max)	Current - Continuous Drain (Id)	Package Name	Mounting Type	Vgs(th) (Max)	Drain to Source Voltage (Vdss)	Package / Case	Rds On (Max)	Gate Charge (Max)	Channel Count	Configuration - Features	Configuration	Technology	Operating Temperature (Min)	Operating Temperature (Max)	Current - Continuous Drain (Id) (Ta)
EPC EPC2110ENGRT	80 pF	3.4 A	Die	Surface Mount	2.5 V	120 V	Die	60 mOhm	0.8 nC	2	Dual	N-Channel	GaNFET (Gallium Nitride)	-40 °C	150 °C
EPC EPC2111	230 pF 590 pF 595 pF		Die	Surface Mount	2.5 V 2.5 V	30 V	Die	19 mOhm	2.2 nC 2.2 nC 2.2 nC 5.7 nC 5.8 nC	2	Half Bridge	N-Channel	GaNFET (Gallium Nitride)	-40 °C	150 °C	16 A
EPC EPC2110	80 pF	3.4 A	Die		2.5 V	120 V	Die	60 mOhm	0.8 nC	2	Dual	N-Channel	GaNFET (Gallium Nitride)	-40 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

3D models and CAD resources for this part

General part information

Mosfet Array 120V 3.4A Die

Technical documentation and resources