Discrete Semiconductor Products

EPC2111

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GANFET 2N-CH 30V 16A DIE

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Discrete Semiconductor Products

Active

GANFET 2N-CH 30V 16A DIE

Technical Specifications

Parameters and characteristics for this part

Specification	EPC2111

Configuration	2 N-Channel
Drain to Source Voltage (Vdss)	30 V
Gate Charge (Qg) (Max) @ Vgs	2.2 nC, 5.7 nC, 2.2 nC, 5.8 nC
Input Capacitance (Ciss) (Max) @ Vds	230 pF, 590 pF, 595 pF, 230 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	Die
Rds On (Max) @ Id, Vgs	19 mOhm, 8 mOhm
Supplier Device Package	Die
Technology	GaNFET (Gallium Nitride)
Vgs(th) (Max) @ Id	2.5 V, 2.5 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Mounting Type	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Package / Case	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Configuration	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs
EPC EPC2110ENGRT	80 pF	3.4 A	Die	Surface Mount	2.5 V	120 V	Die	60 mOhm	0.8 nC	2 N-Channel (Dual) Common Source	GaNFET (Gallium Nitride)	-40 °C	150 °C
EPC EPC2111	230 pF 230 pF 590 pF 595 pF		Die	Surface Mount	2.5 V 2.5 V	30 V	Die	8 mOhm 19 mOhm		2 N-Channel	GaNFET (Gallium Nitride)	-40 °C	150 °C	2.2 nC 2.2 nC 5.7 nC 5.8 nC
EPC EPC2110	80 pF	3.4 A	Die		2.5 V	120 V	Die	60 mOhm	0.8 nC	2 N-Channel (Dual) Common Source	GaNFET (Gallium Nitride)	-40 °C	150 °C

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General part information

Mosfet Array 30V 16A (Ta) Surface Mount Die

Technical documentation and resources