Texas Instruments

The UCC5710x is a single channel, high-performance low-side IGBT/SiC gate driver for high power automotive applications such as PTC heaters, traction inverter active discharge circuit, and other auxiliary subsystems. It offers protection features including Under-voltage-lock-out (UVLO), Desaturation protection (DESAT), FAULT report, and thermal shutdown protection. The UCC5710x has a typical peak drive strength of 3A and it can handle –5V on its inputs, which improves robustness in systems with moderate ground bouncing. The inputs are independent of supply voltage and can be connected to most controller outputs for maximum control flexibility. Depending on the different pin configuration, the wide voltage range of the bias supply provided in the UCC5710xB accommodates bipolar voltage. Also, seperate high and low driver outputs (UCC5710xC) and an enable function (UCC5710xW) are provided. An accurate 5V output is available with the UCC5710xB and UCC5710xC. The UCC5710x is a single channel, high-performance low-side IGBT/SiC gate driver for high power automotive applications such as PTC heaters, traction inverter active discharge circuit, and other auxiliary subsystems. It offers protection features including Under-voltage-lock-out (UVLO), Desaturation protection (DESAT), FAULT report, and thermal shutdown protection. The UCC5710x has a typical peak drive strength of 3A and it can handle –5V on its inputs, which improves robustness in systems with moderate ground bouncing. The inputs are independent of supply voltage and can be connected to most controller outputs for maximum control flexibility. Depending on the different pin configuration, the wide voltage range of the bias supply provided in the UCC5710xB accommodates bipolar voltage. Also, seperate high and low driver outputs (UCC5710xC) and an enable function (UCC5710xW) are provided. An accurate 5V output is available with the UCC5710xB and UCC5710xC.

The UCC5870-Q1 device is an isolated, highly configurable single-channel gate driver targeted to drive high power SiC MOSFETs and IGBTs in EV/HEV applications. Power transistor protections, such as shunt-resistor–based overcurrent, NTC-based overtemperature, and DESAT detection, include selectable soft turn-off or two-level turn-off during these faults. To further reduce the application size, the UCC5870-Q1 integrates a 4-A active Miller clamp during switching, and an active gate pulldown while the driver is unpowered. An integrated 10-bit ADC enables monitoring of up to six analog inputs and the gate driver temperature for enhanced system management. Diagnostics and detection functions are integrated to simplify the design of ASIL-D compliant systems. The parameters and thresholds for these features are configurable using the SPI interface, which allows the device to be used with nearly any SiC MOSFET or IGBT. The UCC5870-Q1 device is an isolated, highly configurable single-channel gate driver targeted to drive high power SiC MOSFETs and IGBTs in EV/HEV applications. Power transistor protections, such as shunt-resistor–based overcurrent, NTC-based overtemperature, and DESAT detection, include selectable soft turn-off or two-level turn-off during these faults. To further reduce the application size, the UCC5870-Q1 integrates a 4-A active Miller clamp during switching, and an active gate pulldown while the driver is unpowered. An integrated 10-bit ADC enables monitoring of up to six analog inputs and the gate driver temperature for enhanced system management. Diagnostics and detection functions are integrated to simplify the design of ASIL-D compliant systems. The parameters and thresholds for these features are configurable using the SPI interface, which allows the device to be used with nearly any SiC MOSFET or IGBT.

The UCC5871-Q1 device is an isolated, highly configurable single-channel gate driver targeted to drive high power SiC MOSFETs and IGBTs in EV/HEV applications. Power transistor protections, such as shunt-resistor–based overcurrent, NTC-based overtemperature, and DESAT detection, include selectable soft turn-off or two-level turn-off during these faults. To further reduce the application size, the UCC5871-Q1 integrates a 4-A active Miller clamp during switching, and an active gate pulldown while the driver is unpowered. An integrated 10-bit ADC enables monitoring of up to six analog inputs and the gate driver temperature for enhanced system management. Diagnostics and detection functions are integrated to simplify the system design. The parameters and thresholds for these features are configurable using the SPI interface, which allows the device to be used with nearly any SiC MOSFET or IGBT. The UCC5871-Q1 device is an isolated, highly configurable single-channel gate driver targeted to drive high power SiC MOSFETs and IGBTs in EV/HEV applications. Power transistor protections, such as shunt-resistor–based overcurrent, NTC-based overtemperature, and DESAT detection, include selectable soft turn-off or two-level turn-off during these faults. To further reduce the application size, the UCC5871-Q1 integrates a 4-A active Miller clamp during switching, and an active gate pulldown while the driver is unpowered. An integrated 10-bit ADC enables monitoring of up to six analog inputs and the gate driver temperature for enhanced system management. Diagnostics and detection functions are integrated to simplify the system design. The parameters and thresholds for these features are configurable using the SPI interface, which allows the device to be used with nearly any SiC MOSFET or IGBT.

The UCC5880-Q1 device is an isolated, highly configurable adjustable drive strength gate driver targeted to drive high power SiC MOSFETs and IGBTs in EV/HEV applications. Power transistor protections are included, such as shunt resistor based over-current, over-temperature (PTC, NTC, or diode), and DESAT detection, with selectable soft turn-off or two-level soft turn-off during these faults. An integrated 10-bit ADC enables monitoring of up to 2 analog inputs, VCC2, DESAT, and the gate driver temperature for enhanced system management. Diagnostics and detection functions are integrated to simplify the design of ASIL compliant systems. The parameters and thresholds for these features are configurable using the SPI, which allows the device to be used with nearly any SiC MOSFET or IGBT. The UCC5880-Q1 device is an isolated, highly configurable adjustable drive strength gate driver targeted to drive high power SiC MOSFETs and IGBTs in EV/HEV applications. Power transistor protections are included, such as shunt resistor based over-current, over-temperature (PTC, NTC, or diode), and DESAT detection, with selectable soft turn-off or two-level soft turn-off during these faults. An integrated 10-bit ADC enables monitoring of up to 2 analog inputs, VCC2, DESAT, and the gate driver temperature for enhanced system management. Diagnostics and detection functions are integrated to simplify the design of ASIL compliant systems. The parameters and thresholds for these features are configurable using the SPI, which allows the device to be used with nearly any SiC MOSFET or IGBT.

The UCD30xx devices are members of a family of digital PWM controllers from Texas Instruments providing a single-chip control solution for digital power-conversion applications. These devices allow digital control implementation of a high-performance, high-frequency power supply with flexible configuration of parameters, supervisory, monitoring, and communication functions. The UCD30xx are fully programmable solutions that are configurable to support a wide range of isolated and non-isolated topologies in single- or multiphase configurations. Some examples include interleaved PFC, isolated forward, half-bridge, phase-shifted full bridge, active clamp, and resonant LLC. At the core of the UCD30xx controllers are the digital control-loop peripherals, also known as Fusion Digital Power peripherals (FDPP). Each FDPP implements a high-speed digital control loop consisting of a dedicated error analog-to-digital converter (EADC), a three-pole/three-zero (3p, 3z) digital compensator, and two DPWM outputs with 250-ps pulse-width resolution. The device also contains a 12-bit, 200-ksps general-purpose ADC with up to 15 channels, timers, interrupt controls, and communications ports such as PMBus, SCI, and SPI. The device is based on a 32-bit ARM7 RISC CPU that performs real-time monitoring, configures peripherals, and manages communications. The CPU executes its program out of programmable flash memory as well as ROM. The UCD30xx is supported by Texas Instruments' Code Composer Studio software development environment. The UCD30xx devices are members of a family of digital PWM controllers from Texas Instruments providing a single-chip control solution for digital power-conversion applications. These devices allow digital control implementation of a high-performance, high-frequency power supply with flexible configuration of parameters, supervisory, monitoring, and communication functions. The UCD30xx are fully programmable solutions that are configurable to support a wide range of isolated and non-isolated topologies in single- or multiphase configurations. Some examples include interleaved PFC, isolated forward, half-bridge, phase-shifted full bridge, active clamp, and resonant LLC. At the core of the UCD30xx controllers are the digital control-loop peripherals, also known as Fusion Digital Power peripherals (FDPP). Each FDPP implements a high-speed digital control loop consisting of a dedicated error analog-to-digital converter (EADC), a three-pole/three-zero (3p, 3z) digital compensator, and two DPWM outputs with 250-ps pulse-width resolution. The device also contains a 12-bit, 200-ksps general-purpose ADC with up to 15 channels, timers, interrupt controls, and communications ports such as PMBus, SCI, and SPI. The device is based on a 32-bit ARM7 RISC CPU that performs real-time monitoring, configures peripherals, and manages communications. The CPU executes its program out of programmable flash memory as well as ROM. The UCD30xx is supported by Texas Instruments' Code Composer Studio software development environment.