Deep-Dive with AI
Search across all available documentation for this part.
Documents5962R2220105PYE | Datasheet
Deep-Dive with AI
Documents5962R2220105PYE | Datasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | 5962R2220105PYE |
|---|---|
| Channel Type | Independent |
| Current - Peak Output (Source, Sink) | 1.3 A, 2.5 A |
| Driven Configuration | Half-Bridge |
| Gate Type | MOSFET (N-Channel) |
| High Side Voltage - Max (Bootstrap) [Max] | 76 V |
| Input Type | Non-Inverting |
| Logic Voltage - VIL, VIH | 1.85 V, 1.8 V |
| Mounting Type | Surface Mount |
| Number of Drivers | 2 |
| Operating Temperature [Max] | 125 °C |
| Operating Temperature [Min] | -55 ░C |
| Package / Case | 56-TFSOP (0.240", 6.10mm Width) Exposed Pad |
| Rise / Fall Time (Typ) | 4 ns |
| Rise / Fall Time (Typ) | 3.5 ns |
| Supplier Device Package | 56-HTSSOP |
| Voltage - Supply [Max] | 14 V |
| Voltage - Supply [Min] | 10 VDC |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 0.00 | |
Description
General part information
5962R2220105PYE
RADIATION-HARDENED, QMLP 60V HAL
Documents
Technical documentation and resources