Texas Instruments

The SN74CBT6800C is a high-speed TTL-compatible FET bus switch with low ON-state resistance (ron), allowing for minimal propagation delay. Active Undershoot-Protection Circuitry on the A and B ports of the SN74CBT6800C provides protection for undershoot up to –2 V by sensing an undershoot event and ensuring that the switch remains in the proper OFF state. The device also precharges the B port to a user-selectable bias voltage (BIASV) to minimize live-insertion noise. The SN74CBT6800C is a 10-bit bus switch with a single output-enable (ON\) input. When ON\ is low, the 10-bit bus switch is ON, and the A port is connected to the B port, allowing bidirectional data flow between ports. When ON\ is high, the 10-bit bus switch is OFF, and a high-impedance state exists between the A and B ports. The B port is precharged to BIASV through the equivalent of a 10-kresistor when ON\ is high, or if the device is powered down (VCC= 0 V). During insertion (or removal) of a card into (or from) an active bus, the card’s output voltage may be close to GND. When the connector pins make contact, the card’s parasitic capacitance tries to force the bus signal to GND, creating a possible glitch on the active bus. This glitching effect can be reduced by using a bus switch with precharged bias voltage (BIASV) of the bus switch equal to the input threshold voltage level of the receivers on the active bus. This method will ensure that any glitch produced by insertion (or removal) of the card will not cross the input threshold region of the receivers on the active bus, minimizing the effects of live-insertion noise. This device is fully specified for partial-power-down applications using Ioff. The Iofffeature ensures that damaging current will not backflow through the device when it is powered down. The device has isolation during power off. To ensure the high-impedance state during power up or power down, ON\ should be tied to VCCthrough a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver. The SN74CBT6800C is a high-speed TTL-compatible FET bus switch with low ON-state resistance (ron), allowing for minimal propagation delay. Active Undershoot-Protection Circuitry on the A and B ports of the SN74CBT6800C provides protection for undershoot up to –2 V by sensing an undershoot event and ensuring that the switch remains in the proper OFF state. The device also precharges the B port to a user-selectable bias voltage (BIASV) to minimize live-insertion noise. The SN74CBT6800C is a 10-bit bus switch with a single output-enable (ON\) input. When ON\ is low, the 10-bit bus switch is ON, and the A port is connected to the B port, allowing bidirectional data flow between ports. When ON\ is high, the 10-bit bus switch is OFF, and a high-impedance state exists between the A and B ports. The B port is precharged to BIASV through the equivalent of a 10-kresistor when ON\ is high, or if the device is powered down (VCC= 0 V). During insertion (or removal) of a card into (or from) an active bus, the card’s output voltage may be close to GND. When the connector pins make contact, the card’s parasitic capacitance tries to force the bus signal to GND, creating a possible glitch on the active bus. This glitching effect can be reduced by using a bus switch with precharged bias voltage (BIASV) of the bus switch equal to the input threshold voltage level of the receivers on the active bus. This method will ensure that any glitch produced by insertion (or removal) of the card will not cross the input threshold region of the receivers on the active bus, minimizing the effects of live-insertion noise. This device is fully specified for partial-power-down applications using Ioff. The Iofffeature ensures that damaging current will not backflow through the device when it is powered down. The device has isolation during power off. To ensure the high-impedance state during power up or power down, ON\ should be tied to VCCthrough a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

The SN74CBT6845C is a high-speed TTL-compatible FET bus switch with low ON-state resistance (ron), allowing for minimal propagation delay. Active Undershoot-Protection Circuitry on the A and B ports of the SN74CBT6845C provides protection for undershoot up to –2 V by sensing an undershoot event and ensuring that the switch remains in the proper OFF state. The device also precharges the B port to a user-selectable bias voltage (BIASV) to minimize live-insertion noise. The SN74CBT6845C is an 8-bit bus switch with a single output-enable (OE\) input. When OE\ is low, the 8-bit bus switch is ON, and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE\ is high, the 8-bit bus switch is OFF, and a high-impedance state exists between the A and B ports. The B port is precharged to BIASV through the equivalent of a 10-kresistor when OE\ is high, or if the device is powered down (VCC= 0 V). During insertion (or removal) of a card into (or from) an active bus, the card’s output voltage may be close to GND. When the connector pins make contact, the card’s parasitic capacitance tries to force the bus signal to GND, creating a possible glitch on the active bus. This glitching effect can be reduced by using a bus switch with precharged bias voltage (BIASV) of the bus switch equal to the input threshold voltage level of the receivers on the active bus. This method will ensure that any glitch produced by insertion (or removal) of the card will not cross the input threshold region of the receivers on the active bus, minimizing the effects of live-insertion noise. This device is fully specified for partial-power-down applications using Ioff. The Iofffeature ensures that damaging current will not backflow through the device when it is powered down. The device has isolation during power off. To ensure the high-impedance state during power up or power down, OE\ should be tied to VCCthrough a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver. The SN74CBT6845C is a high-speed TTL-compatible FET bus switch with low ON-state resistance (ron), allowing for minimal propagation delay. Active Undershoot-Protection Circuitry on the A and B ports of the SN74CBT6845C provides protection for undershoot up to –2 V by sensing an undershoot event and ensuring that the switch remains in the proper OFF state. The device also precharges the B port to a user-selectable bias voltage (BIASV) to minimize live-insertion noise. The SN74CBT6845C is an 8-bit bus switch with a single output-enable (OE\) input. When OE\ is low, the 8-bit bus switch is ON, and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE\ is high, the 8-bit bus switch is OFF, and a high-impedance state exists between the A and B ports. The B port is precharged to BIASV through the equivalent of a 10-kresistor when OE\ is high, or if the device is powered down (VCC= 0 V). During insertion (or removal) of a card into (or from) an active bus, the card’s output voltage may be close to GND. When the connector pins make contact, the card’s parasitic capacitance tries to force the bus signal to GND, creating a possible glitch on the active bus. This glitching effect can be reduced by using a bus switch with precharged bias voltage (BIASV) of the bus switch equal to the input threshold voltage level of the receivers on the active bus. This method will ensure that any glitch produced by insertion (or removal) of the card will not cross the input threshold region of the receivers on the active bus, minimizing the effects of live-insertion noise. This device is fully specified for partial-power-down applications using Ioff. The Iofffeature ensures that damaging current will not backflow through the device when it is powered down. The device has isolation during power off. To ensure the high-impedance state during power up or power down, OE\ should be tied to VCCthrough a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

The SN74CBTD16210 provides 20 bits of high-speed TTL-compatible bus switching. The low on-state resistance of the switch allows connections to be made with minimal propagation delay. A diode to VCCis integrated in the circuit to allow for level shifting from 5-V signals at the device inputs to 3.3-V signals at the device outputs. The device is organized as a dual 10-bit bus switch with separate output-enable (OE)\ inputs. It can be used as two 10-bit bus switches or as one 20-bit bus switch. When (OE)\ is low, the associated 10-bit bus switch is on, and port A is connected to port B. When (OE)\ is high, the switch is open, and the high-impedance state exists between the ports. The SN74CBTD16210 provides 20 bits of high-speed TTL-compatible bus switching. The low on-state resistance of the switch allows connections to be made with minimal propagation delay. A diode to VCCis integrated in the circuit to allow for level shifting from 5-V signals at the device inputs to 3.3-V signals at the device outputs. The device is organized as a dual 10-bit bus switch with separate output-enable (OE)\ inputs. It can be used as two 10-bit bus switches or as one 20-bit bus switch. When (OE)\ is low, the associated 10-bit bus switch is on, and port A is connected to port B. When (OE)\ is high, the switch is open, and the high-impedance state exists between the ports.

The SN74CBTD16211 provides 24 bits of high-speed TTL-compatible bus switching. The low on-state resistance of the switch allows connections to be made with minimal propagation delay. A diode to VCCis integrated in the circuit to allow for level shifting from 5-V signals at the device inputs to 3.3-V signals at the device outputs. The device is organized as a dual 12-bit bus switch with separate output-enable (OE)\ inputs. It can be used as two 12-bit bus switches or as one 24-bit bus switch. When (OE)\ is low, the associated 12-bit bus switch is on, and port A is connected to port B. When (OE)\ is high, the switch is open, and the high-impedance state exists between the ports. The SN74CBTD16211 provides 24 bits of high-speed TTL-compatible bus switching. The low on-state resistance of the switch allows connections to be made with minimal propagation delay. A diode to VCCis integrated in the circuit to allow for level shifting from 5-V signals at the device inputs to 3.3-V signals at the device outputs. The device is organized as a dual 12-bit bus switch with separate output-enable (OE)\ inputs. It can be used as two 12-bit bus switches or as one 24-bit bus switch. When (OE)\ is low, the associated 12-bit bus switch is on, and port A is connected to port B. When (OE)\ is high, the switch is open, and the high-impedance state exists between the ports.

The SN74CBTD1G125 features a single high-speed line switch. The switch is disabled when the output-enable (OE) input is high. A diode to VCCis integrated on the chip to allow for level shifting from 5-V signals at the device inputs to 3.3-V signals at the device outputs. The SN74CBTD1G125 features a single high-speed line switch. The switch is disabled when the output-enable (OE) input is high. A diode to VCCis integrated on the chip to allow for level shifting from 5-V signals at the device inputs to 3.3-V signals at the device outputs.

The SN74CBTD1G384 features a single high-speed line switch. The switch is disabled when the output-enable (OE) input is high. A diode to VCCis integrated on the chip to allow for level shifting from 5-V signals at the device inputs to 3.3-V signals at the device outputs. The SN74CBTD1G384 features a single high-speed line switch. The switch is disabled when the output-enable (OE) input is high. A diode to VCCis integrated on the chip to allow for level shifting from 5-V signals at the device inputs to 3.3-V signals at the device outputs.

The SN74CBTD3305C is a high-speed TTL-compatible FET bus switch with low ON-state resistance (ron), allowing for minimal propagation delay. This device features an integrated diode in series with VCCto provide level shifting for 5-V input down to 3.3-V output levels. Active Undershoot-Protection Circuitry on the A and B ports of the SN74CBTD3305C provides protection for undershoot up to –2 V by sensing an undershoot event and ensuring that the switch remains in the proper OFF state. The SN74CBTD3305C is organized as two 1-bit bus switches with separate output-enable (1OE, 2OE) inputs. It can be used as two 1-bit bus switches or as one 2-bit bus switch. When OE is high, the associated 1-bit bus switch is ON, and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE is low, the associated 1-bit bus switch is OFF, and a high-impedance state exists between the A and B ports. This device is fully specified for partial-power-down applications using Ioff. The Iofffeature ensures that damaging current will not backflow through the device when it is powered down. To ensure the high-impedance state during power up or power down, OE should be tied to GND through a pulldown resistor; the minimum value of the resistor is determined by the current-sourcing capability of the driver. The SN74CBTD3305C is a high-speed TTL-compatible FET bus switch with low ON-state resistance (ron), allowing for minimal propagation delay. This device features an integrated diode in series with VCCto provide level shifting for 5-V input down to 3.3-V output levels. Active Undershoot-Protection Circuitry on the A and B ports of the SN74CBTD3305C provides protection for undershoot up to –2 V by sensing an undershoot event and ensuring that the switch remains in the proper OFF state. The SN74CBTD3305C is organized as two 1-bit bus switches with separate output-enable (1OE, 2OE) inputs. It can be used as two 1-bit bus switches or as one 2-bit bus switch. When OE is high, the associated 1-bit bus switch is ON, and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE is low, the associated 1-bit bus switch is OFF, and a high-impedance state exists between the A and B ports. This device is fully specified for partial-power-down applications using Ioff. The Iofffeature ensures that damaging current will not backflow through the device when it is powered down. To ensure the high-impedance state during power up or power down, OE should be tied to GND through a pulldown resistor; the minimum value of the resistor is determined by the current-sourcing capability of the driver.

The SN74CBTD3306C is a high-speed TTL-compatible FET bus switch with low ON-state resistance (ron), allowing for minimal propagation delay. This device features an integrated diode in series with VCCto provide level shifting for 5-V input down to 3.3-V output levels. Active Undershoot-Protection Circuitry on the A and B ports of the SN74CBTD3306C provides protection for undershoot up to –2 V by sensing an undershoot event and ensuring that the switch remains in the proper OFF state. The SN74CBTD3306C is organized as two 1-bit bus switches with separate output-enable (1OE\, 2OE\) inputs. It can be used as two 1-bit bus switches or as one 2-bit bus switch. When OE\ is low, the associated 1-bit bus switch is ON, and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE\ is high, the associated 1-bit bus switch is OFF, and a high-impedance state exists between the A and B ports. This device is fully specified for partial-power-down applications using Ioff. The Iofffeature ensures that damaging current will not backflow through the device when it is powered down. To ensure the high-impedance state during power up or power down, OE\ should be tied to VCCthrough a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver. The SN74CBTD3306C is a high-speed TTL-compatible FET bus switch with low ON-state resistance (ron), allowing for minimal propagation delay. This device features an integrated diode in series with VCCto provide level shifting for 5-V input down to 3.3-V output levels. Active Undershoot-Protection Circuitry on the A and B ports of the SN74CBTD3306C provides protection for undershoot up to –2 V by sensing an undershoot event and ensuring that the switch remains in the proper OFF state. The SN74CBTD3306C is organized as two 1-bit bus switches with separate output-enable (1OE\, 2OE\) inputs. It can be used as two 1-bit bus switches or as one 2-bit bus switch. When OE\ is low, the associated 1-bit bus switch is ON, and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE\ is high, the associated 1-bit bus switch is OFF, and a high-impedance state exists between the A and B ports. This device is fully specified for partial-power-down applications using Ioff. The Iofffeature ensures that damaging current will not backflow through the device when it is powered down. To ensure the high-impedance state during power up or power down, OE\ should be tied to VCCthrough a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

The SN74CBTD3384C is a high-speed TTL-compatible FET bus switch with low ON-state resistance, allowing for minimal propagation delay. This device features an integrated diode to VCCto provide level shifting for 5-V input down to 3.3-V output levels. Active Undershoot-Protection Circuitry on the A and B ports of the SN74CBTD3384C provides protection for undershoot down to –2 V by sensing an undershoot event and ensuring that the switch remains in the proper state. The SN74CBTD3384C is organized as two 5-bit bus switches with separate output-enable (OE)\ inputs. It can be used as two 5-bit bus switches or as one 10-bit bus switch. When OE\ is low, the associated 5-bit bus switch is ON, and port A is connected to port B. When OE\ is high, the associated 5-bit bus switch is OFF, and a high-impedance state exists between the A and B ports. This device is fully specified for partial-power-down applications using Ioff. The Iofffeature ensures that damaging current will not backflow through the device when it is powered down. To ensure the high-impedance state during power up or power down, OE\ should be tied to VCCthrough a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver. The SN74CBTD3384C is a high-speed TTL-compatible FET bus switch with low ON-state resistance, allowing for minimal propagation delay. This device features an integrated diode to VCCto provide level shifting for 5-V input down to 3.3-V output levels. Active Undershoot-Protection Circuitry on the A and B ports of the SN74CBTD3384C provides protection for undershoot down to –2 V by sensing an undershoot event and ensuring that the switch remains in the proper state. The SN74CBTD3384C is organized as two 5-bit bus switches with separate output-enable (OE)\ inputs. It can be used as two 5-bit bus switches or as one 10-bit bus switch. When OE\ is low, the associated 5-bit bus switch is ON, and port A is connected to port B. When OE\ is high, the associated 5-bit bus switch is OFF, and a high-impedance state exists between the A and B ports. This device is fully specified for partial-power-down applications using Ioff. The Iofffeature ensures that damaging current will not backflow through the device when it is powered down. To ensure the high-impedance state during power up or power down, OE\ should be tied to VCCthrough a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

The SN74CBTD3861 provides ten bits of high-speed TTL-compatible bus switching. The low on-state resistance of the switch allows connections to be made with minimal propagation delay. A diode to VCCis integrated on the die to allow for level shifting from 5-V signals at the device inputs to 3.3-V signals at the device outputs. The device is organized as one 10-bit switch with a single output-enable (OE)\ input. When (OE)\ is low, the switch is on, and port A is connected to port B. When (OE)\ is high, the switch is open, and the high-impedance state exists between the two ports. The SN74CBTD3861 provides ten bits of high-speed TTL-compatible bus switching. The low on-state resistance of the switch allows connections to be made with minimal propagation delay. A diode to VCCis integrated on the die to allow for level shifting from 5-V signals at the device inputs to 3.3-V signals at the device outputs. The device is organized as one 10-bit switch with a single output-enable (OE)\ input. When (OE)\ is low, the switch is on, and port A is connected to port B. When (OE)\ is high, the switch is open, and the high-impedance state exists between the two ports.