Texas Instruments

3-Line To 8-Line Decoders/Demultiplexers

The SNx4HCT245 octal bus transceivers are designed for asynchronous two-way communication between data buses. The control-function implementation minimizes external timing requirements. The SNx4HCT245 devices allow data transmission from the A bus to the B bus or from the B bus to the A bus, depending upon the logic level at the direction-control (DIR) input. The output-enable (OE) input can be used to disable the device so that the buses are effectively isolated. The SNx4HCT245 octal bus transceivers are designed for asynchronous two-way communication between data buses. The control-function implementation minimizes external timing requirements. The SNx4HCT245 devices allow data transmission from the A bus to the B bus or from the B bus to the A bus, depending upon the logic level at the direction-control (DIR) input. The output-enable (OE) input can be used to disable the device so that the buses are effectively isolated.

The SNx4HCT245 octal bus transceivers are designed for asynchronous two-way communication between data buses. The control-function implementation minimizes external timing requirements. The SNx4HCT245 devices allow data transmission from the A bus to the B bus or from the B bus to the A bus, depending upon the logic level at the direction-control (DIR) input. The output-enable (OE) input can be used to disable the device so that the buses are effectively isolated. The SNx4HCT245 octal bus transceivers are designed for asynchronous two-way communication between data buses. The control-function implementation minimizes external timing requirements. The SNx4HCT245 devices allow data transmission from the A bus to the B bus or from the B bus to the A bus, depending upon the logic level at the direction-control (DIR) input. The output-enable (OE) input can be used to disable the device so that the buses are effectively isolated.

Octal D-type Edge-Triggered Flip-Flops with 3-State Outputs

The SNx4xx00 devices contain four independent,2-input NAND gates. The devices perform the Boolean function Y =A .Bor Y =A+Bin positive logic. The SNx4xx00 devices contain four independent,2-input NAND gates. The devices perform the Boolean function Y =A .Bor Y =A+Bin positive logic.

These devices contain four independent 2-input-NOR gates. The SN5402, SN54LS02, and SN54S02 are characterized for operation over the full military temperature range of -55°C to 125°C. The SN7402, SN74LS02, and SN74S02 are characterized for operation from 0°C to 70°C. These devices contain four independent 2-input-NOR gates. The SN5402, SN54LS02, and SN54S02 are characterized for operation over the full military temperature range of -55°C to 125°C. The SN7402, SN74LS02, and SN74S02 are characterized for operation from 0°C to 70°C.

These devices contain four independent 2-input-NAND gates. The open-collector outputs require pull-up resistors to perform correctly. They may be connected to other open-collector outputs to implement active-low wired-OR or active-high wired-AND functions. Open-collector devices are often used to generate higher VOHlevels. The SN5403, SN54LS03 and SN54S03 are characterized for operation over the full military temperature range of -55°C to 125°C. The SN7403, SN74LS03 and SN74S03 are characterized for operation from 0°C to 70°C. These devices contain four independent 2-input-NAND gates. The open-collector outputs require pull-up resistors to perform correctly. They may be connected to other open-collector outputs to implement active-low wired-OR or active-high wired-AND functions. Open-collector devices are often used to generate higher VOHlevels. The SN5403, SN54LS03 and SN54S03 are characterized for operation over the full military temperature range of -55°C to 125°C. The SN7403, SN74LS03 and SN74S03 are characterized for operation from 0°C to 70°C.

These devices contain six independent inverters. These devices contain six independent inverters.

These devices contain six independent inverters. To perform correctly, the open-collector outputs require pullup resistors. These devices may be connected to other open-collector outputs to implement active-low wired-OR or active-high wire-AND functions. Open-collector devices often are used to generate high VOHlevels. These devices contain six independent inverters. To perform correctly, the open-collector outputs require pullup resistors. These devices may be connected to other open-collector outputs to implement active-low wired-OR or active-high wire-AND functions. Open-collector devices often are used to generate high VOHlevels.

These d-c triggered multivibrators feature output pulse-duration control by three methods. The basic pulse time is programmed by selection of external resistance and capacitance values (see typical application data). The '122 and 'LS122 have internal timing resistors that allow the circuits to be used with only an external capacitor, if so desired. Once triggered, the basic pulse duration may be extended by retriggering the gated low-level-active (A) or high-level-active (B) inputs, or be reduced by use of the overriding clear. Figure 1 illustrates pulse control by retriggering and early clear. The 'LS122 and 'LS123 are provided enough Schmitt hysteresis to ensure jitter-free triggering from the B input with transition rates as slow as 0.1 millivolt per nanosecond. The Rintis nominally 10 kfor '122 and 'LS122. These d-c triggered multivibrators feature output pulse-duration control by three methods. The basic pulse time is programmed by selection of external resistance and capacitance values (see typical application data). The '122 and 'LS122 have internal timing resistors that allow the circuits to be used with only an external capacitor, if so desired. Once triggered, the basic pulse duration may be extended by retriggering the gated low-level-active (A) or high-level-active (B) inputs, or be reduced by use of the overriding clear. Figure 1 illustrates pulse control by retriggering and early clear. The 'LS122 and 'LS123 are provided enough Schmitt hysteresis to ensure jitter-free triggering from the B input with transition rates as slow as 0.1 millivolt per nanosecond. The Rintis nominally 10 kfor '122 and 'LS122.