STW20NK50Z Series
N-channel 500 V, 0.23 Ohm, 20 A SuperMESH(TM) Power MOSFET Zener-protected in TO-247 package
Manufacturer: STMicroelectronics
Catalog
N-channel 500 V, 0.23 Ohm, 20 A SuperMESH(TM) Power MOSFET Zener-protected in TO-247 package
| Part | Input Capacitance (Ciss) (Max) @ Vds | Technology | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Package / Case | Power Dissipation (Max) | Drain to Source Voltage (Vdss) | Operating Temperature [Max] | Operating Temperature [Min] | Mounting Type | Vgs (Max) | Supplier Device Package | Rds On (Max) @ Id, Vgs | FET Type | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Rds On (Max) @ Id, Vgs [Max] | Operating Temperature | Power Dissipation (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 STMicroelectronics | 1300 pF | MOSFET (Metal Oxide) | 20 A | 10 V | TO-247-3 | 214 W | 600 V | 150 °C | -65 °C | Through Hole | 30 V | TO-247-3 | 290 mOhm | N-Channel | 5 V | ||||
 STMicroelectronics | 1380 pF | MOSFET (Metal Oxide) | 20 A | 10 V | TO-247-3 | 214 W | 500 V | Through Hole | 30 V | TO-247-3 | N-Channel | 5 V | 53 nC | 250 mOhm | 150 °C | ||||
STMicroelectronics | 2600 pF | MOSFET (Metal Oxide) | 17 A | 10 V | TO-247-3 | 500 V | Through Hole | 30 V | TO-247-3 | 270 mOhm | N-Channel | 4.5 V | 119 nC | 150 °C | 190 W | ||||
STMicroelectronics | 1500 pF | MOSFET (Metal Oxide) | 20 A | 10 V | TO-247-3 | 192 W | 600 V | Through Hole | 30 V | TO-247-3 | 290 mOhm | N-Channel | 5 V | 54 nC | 150 °C |
Description
AI
The MDmesh™is a new revolutionary Power MOSFET technology that associates the multiple drain process with the company’s PowerMESH™horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products.