STP5N60M2 Series

N-channel 600 V, 1.3 Ohm typ., 3.5 A MDmesh M2 Power MOSFET in TO-220 package

Catalog

N-channel 600 V, 1.3 Ohm typ., 3.5 A MDmesh M2 Power MOSFET in TO-220 package

Part	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs (Max)	FET Type	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Mounting Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature
STMicroelectronics STP5N60M2	165 pF	TO-220	10 V	1.4 Ohm	25 V	N-Channel	4 V	45 W	MOSFET (Metal Oxide)	4.5 nC	TO-220-3	Through Hole	600 V	3.7 A	150 °C

Catalog

N-channel 600 V, 1.3 Ohm typ., 3.5 A MDmesh M2 Power MOSFET in TO-220 package

Description

These devices are N-channel Power MOSFETs developed using the MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters.