STP150N10F7 Series

N-channel 100 V, 0.0036 Ohm typ., 110 A STripFET F7 Power MOSFET in TO-220 package

Catalog

N-channel 100 V, 0.0036 Ohm typ., 110 A STripFET F7 Power MOSFET in TO-220 package

Part	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	FET Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Package / Case	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package	Technology	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C
STMicroelectronics STP150N10F7	20 V	117 nC	Through Hole	4.5 V	100 V	4.2 mOhm	N-Channel	8115 pF	TO-220-3	175 °C	-55 °C	TO-220	MOSFET (Metal Oxide)	10 V	250 W	110 A

Catalog

N-channel 100 V, 0.0036 Ohm typ., 110 A STripFET F7 Power MOSFET in TO-220 package

Description

These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.