STP15 Series

N-channel 600 V, 0.340 Ohm typ., 11 A MDmesh M2 EP Power MOSFET in a TO-220 package

Catalog

N-channel 600 V, 0.340 Ohm typ., 11 A MDmesh M2 EP Power MOSFET in a TO-220 package

Part	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Vgs(th) (Max) @ Id	Vgs (Max)	Supplier Device Package	Drain to Source Voltage (Vdss)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Technology	Power Dissipation (Max)	Operating Temperature	Package / Case	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Max]	Operating Temperature [Min]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs
STMicroelectronics STP15N65M5	10 V	810 pF	N-Channel	5 V	25 V	TO-220	650 V	Through Hole	22 nC	340 mOhm	MOSFET (Metal Oxide)	125 W	150 °C	TO-220-3	11 A
STMicroelectronics STP15N60M2-EP	10 V		N-Channel	4 V	25 V	TO-220	600 V	Through Hole		378 mOhm	MOSFET (Metal Oxide)	110 W		TO-220-3	11 A	150 °C	-55 °C	590 pF	17 nC

Catalog

N-channel 600 V, 0.340 Ohm typ., 11 A MDmesh M2 EP Power MOSFET in a TO-220 package

Description

These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.