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STMicroelectronics

Series	Category	# Parts	Status	Description

Part	Spec A	Spec B	Spec C	Spec D	Description

Standalone parts(7415)

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Part	Category	Description
STMicroelectronics STEVAL-ISA068V1Obsolete	Development Boards Kits Programmers	EVAL BOARD FOR ST1S32
STMicroelectronics 74VCXHQ163245TTRObsolete	Integrated Circuits (ICs)	IC TRANSLATION TXRX 2.7V 48TSSOP
STMicroelectronics EV-VNQ9050LAJ	Development Boards Kits Programmers	VNQ9050LAJ EVALUATION BOARD
STMicroelectronics LSM303DLHCTRObsolete	Sensors Transducers	IMU ACCEL/MAG 3-AXIS I2C 14LGA
STMicroelectronics M93C56-WMN6TObsolete	Integrated Circuits (ICs)	EEPROM SERIAL-MICROWIRE 2K-BIT 256 X 8/128 X 16 3.3V/5V 8-PIN SO N T/R
STMicroelectronics STM32U375CGT6	Integrated Circuits (ICs)	STM32U
STMicroelectronics TS831-3IZObsolete	Integrated Circuits (ICs)	IC SUPERVISOR 1 CHANNEL TO92-3
STMicroelectronics STMPE1208SQTRObsolete	Integrated Circuits (ICs)	IC I/O EXPANDER I2C 12B 40QFN
STMicroelectronics STM32L1-MAGNETObsolete	Development Boards Kits Programmers	IAR EXPERIMENT STM32 L1 EVAL BRD
STMicroelectronics VNB35N07Obsolete	Integrated Circuits (ICs)	IC PWR DRIVER N-CHAN 1:1 D2PAK

Series	Category	# Parts	Status	Description

STL220	Discrete Semiconductor Products	1	Obsolete
STL220N6F7N-channel 60 V, 0.0012 Ohm typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package	Discrete Semiconductor Products	1	Active	This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
STL225N6F7AG	Transistors	1	Active
STL22N60DM6N-channel 600 V, 220 mOhm typ., 13 A MDmesh DM6 Power MOSFET in a PowerFLAT 8x8 HV package	Transistors	1	Active	This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on)per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
STL23	Single	2	Obsolete
STL24N60DM2N-channel 600 V, 0.195 Ohm typ., 15 A MDmesh DM2 Power MOSFET in a PowerFLAT 8x8 HV package	Transistors	1	Active	This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
STL24N60M2N-channel 600 V, 0.186 Ohm typ., 18 A MDmesh M2 Power MOSFET in a PowerFLAT 8x8 HV package	Transistors	1	Active	This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.
STL24N60M6	Single FETs, MOSFETs	1	Active
STL24N65M2N-channel 650 V, 0.205 Ohm typ., 14 A MDmesh M2 Power MOSFET in a PowerFLAT 8x8 HV package	FETs, MOSFETs	1	Active	This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.
STL25N-channel 600 V, 0.184 Ohm typ., 16 A MDmesh M2 EP Power MOSFET in a PowerFLAT 8x8 HV package	FETs, MOSFETs	2	Active	This device is an N-channel Power MOSFET developed using MDmesh™ M2 EP enhanced performance technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance, optimized switching characteristics with very low turn-off switching losses, rendering it suitable for the most demanding very high frequency converters.