STL13NM60N Series

N-channel 600 V, 0.320 Ohm typ., 10 A MDmesh(TM) II Power MOSFET in PowerFLAT(TM) 8x8 HV package

Catalog

N-channel 600 V, 0.320 Ohm typ., 10 A MDmesh(TM) II Power MOSFET in PowerFLAT(TM) 8x8 HV package

Part	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Rds On (Max) @ Id, Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Package / Case	Supplier Device Package	Operating Temperature	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Technology	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)
STMicroelectronics STL13NM60N	600 V	10 V	N-Channel	385 mOhm	10 A	4-PowerVDFN	PowerFlat™ (8x8) HV	150 °C	Surface Mount	30 nC	MOSFET (Metal Oxide)	4 V	790 pF	30 V

Catalog

N-channel 600 V, 0.320 Ohm typ., 10 A MDmesh(TM) II Power MOSFET in PowerFLAT(TM) 8x8 HV package

Description

This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.