Catalog
Very fast "V" series
| Part | Reverse Recovery Time (trr) | Vce(on) (Max) @ Vge, Ic | Package / Case | Voltage - Collector Emitter Breakdown (Max) [Max] | Switching Energy | Mounting Type | Td (on/off) @ 25°C | Supplier Device Package | Power - Max [Max] | Current - Collector (Ic) (Max) [Max] | Operating Temperature [Max] | Operating Temperature [Min] | Gate Charge | Test Condition |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 STMicroelectronics | 44 ns | 2.5 V | TO-247-3 | 600 V | 330 µJ 720 µJ | Through Hole | 43 ns 140 ns | MAX247™ | 260 W | 80 A | 150 °C | -55 °C | 214 nC | 3.3 Ohm 15 V 40 A 390 V |
Description
AI
Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix "V" identifies a family optimized for very high frequency applications.