STGW40H65DFBTrench gate field-stop 650 V, 40 A high speed HB series IGBT | Discrete Semiconductor Products | 1 | Active | This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation. |
STGW40H65DFB-4Trench gate field-stop 650 V, 40 A high speed HB series IGBT | Discrete Semiconductor Products | 1 | LTB | This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. A faster switching event can be achieved by the Kelvin pin, which separates power path from driving signal. Furthermore, the slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation. |
STGW40M120DF3Trench gate field-stop IGBT, M series 1200 V, 40 A low loss | Single IGBTs | 1 | Active | This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series of IGBTs, which represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short circuit capability are essential. Furthermore, a positive VCE(sat)temperature coefficient and tight parameter distribution result in safer paralleling operation. |
| Single IGBTs | 1 | Obsolete | |
STGW40V60DFTrench gate field-stop IGBT, V series 600 V, 40 A very high speed | Discrete Semiconductor Products | 1 | Active | These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the V series IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, the positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation. |
| IGBTs | 1 | Obsolete | |
| IGBTs | 2 | Obsolete | |
STGW50H65DFB2-4Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT in a TO247-4 package | Transistors | 1 | Active | The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat)behavior at low current values, as well as in terms of reduced switching energy. A very fast soft recovery diode is co-packaged in antiparallel with the IGBT. The result is a product specifically designed to maximize efficiency for a wide range of fast applications. |
| IGBTs | 2 | Obsolete | |
STGW60H65DFBTrench gate field-stop IGBT, HB series 650 V, 60 A high speed | Transistors | 1 | Active | These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. |
