19 A, 600 V, very fast IGBT with Ultrafast diode
19 A, 600 V, very fast IGBT with Ultrafast diode
| Part | Gate Charge | Package / Case | Reverse Recovery Time (trr) | Test Condition | Operating Temperature [Max] | Operating Temperature [Min] | Current - Collector (Ic) (Max) | Td (on/off) @ 25°C [Max] | Td (on/off) @ 25°C [Min] | Mounting Type | Switching Energy | Power - Max [Max] | Current - Collector Pulsed (Icm) | Supplier Device Package | Voltage - Collector Emitter Breakdown (Max) [Max] | Vce(on) (Max) @ Vge, Ic |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 STMicroelectronics | 53 nC | TO-247-3 | 31 ns | 10 Ohm 12 A 15 V 390 V | 150 °C | -55 °C | 42 A | 97 ns | 25 ns | Through Hole | 85 µJ 189 µJ | 140 W | 60 A | TO-247 Long Leads | 600 V | 2.5 V |