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STMicroelectronics
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
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| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
| Part | Category | Description |
|---|---|---|
 STMicroelectronics STEVAL-ISA068V1Obsolete | Development Boards Kits Programmers | EVAL BOARD FOR ST1S32 |
 STMicroelectronics 74VCXHQ163245TTRObsolete | Integrated Circuits (ICs) | IC TRANSLATION TXRX 2.7V 48TSSOP |
 STMicroelectronics | Development Boards Kits Programmers | VNQ9050LAJ EVALUATION BOARD |
 STMicroelectronics LSM303DLHCTRObsolete | Sensors Transducers | IMU ACCEL/MAG 3-AXIS I2C 14LGA |
 STMicroelectronics M93C56-WMN6TObsolete | Integrated Circuits (ICs) | EEPROM SERIAL-MICROWIRE 2K-BIT 256 X 8/128 X 16 3.3V/5V 8-PIN SO N T/R |
STMicroelectronics | Integrated Circuits (ICs) | STM32U |
 STMicroelectronics TS831-3IZObsolete | Integrated Circuits (ICs) | IC SUPERVISOR 1 CHANNEL TO92-3 |
 STMicroelectronics STMPE1208SQTRObsolete | Integrated Circuits (ICs) | IC I/O EXPANDER I2C 12B 40QFN |
 STMicroelectronics STM32L1-MAGNETObsolete | Development Boards Kits Programmers | IAR EXPERIMENT STM32 L1 EVAL BRD |
 STMicroelectronics VNB35N07Obsolete | Integrated Circuits (ICs) | IC PWR DRIVER N-CHAN 1:1 D2PAK |
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
STD888Medium current, high performance, low Voltage PNP transistor | Bipolar (BJT) | 1 | Active | The device in manufactured in low voltage PNP Planar Technology by using a "Base Island" layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. |
| Single | 3 | Obsolete | ||
STD8N65M5N-channel 650 V, 0.56 Ohm typ., 7 A MDmesh M5 Power MOSFET in DPAK package | Transistors | 1 | Active | These devices are N-channel Power MOSFETs based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout. The resulting products offer extremely low on-resistance, making them particularly suitable for applications requiring high power and superior efficiency. |
| Transistors | 1 | Active | ||
| Transistors | 1 | Active | ||
| FETs, MOSFETs | 1 | Active | ||
STD9Automotive-grade N-channel 500 V, 730 mOhm typ., 11 A MDmesh II Power MOSFET in a DPAK package | Single FETs, MOSFETs | 4 | Active | The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on)per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency. |
| FETs, MOSFETs | 2 | Obsolete | ||
STD901THigh voltage NPN Darlington transistor for ignition coil | Bipolar (BJT) | 1 | Active | The device is a high voltage NPN transistor in monolithic special Darlington configuration, designed for applications such as electronic ignition for small engines (scooters, lawnmowers, chainsaws). |
STD95N-channel 40 V, 5 mOhm, 80 A STripFET(TM) III Power MOSFET in DPAK package | Transistors | 3 | Active | These devices are N-channel enhancement mode Power MOSFETs produced using STMicroelectronics’ STripFET™ III technology, which is specifically designed to minimize on-resistance and gate charge to provide superior switching performance. |