STMicroelectronics

The STDRIVE601 is a high voltage device manufactured with BCD6s offline technology. It is a single-chip with three half-bridge gate drivers for N-channel power MOSFETs or IGBTs suitable for 3-phase applications. All device outputs can sink and source 350 mA and 200 mA respectively. Prevention from cross conduction is ensured by interlocking and deadtime function. The device has dedicated input pins for each output and a shutdown pin. The logic inputs are CMOS/TTL compatible down to 3.3 V for easy interfacing with control devices. Matched delays between low-side and high-side sections guarantee no cycle distortion and allow high frequency operation. The STDRIVE601 embeds a comparator featuring advanced SmartSD function also integrated in the device, ensuring fast and effective protection against fault events like overcurrent, overtemperature, etc. Dedicated UVLO protection on the low-sides and each of the high-side driving sections allow to prevent the power switches from operating in low efficiency or dangerous conditions. The integrated bootstrap diodes as well as all of the integrated features of this IC make the application PCB design easier, more compact and simpler, thus reducing the overall bill of material. The device is available in SO-28 package.

The STDRIVEG600 is a single chip half-bridge gate driver for Enhancement mode GaN FETs or N-channel power MOSFET. The high-side section is designed to stand a voltage up to 600 V and is suitable for designs with bus voltage up to 500 V. The device is designed for driving high-speed GaN and Si FETs thanks to high current capability, short propagation delay and operation with supply voltage down to 5 V. The STDRIVEG600 features UVLO protection on both the lower and upper driving sections, preventing the power switches from operating in low efficiency or dangerous conditions, and the interlocking function avoids cross-conduction conditions. The logic inputs are CMOS/TTL compatible down to 3.3 V for easy interfacing with microcontroller and DSP.