S
STMicroelectronics
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
Beta
⌘K
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
| Part | Category | Description |
|---|---|---|
 STMicroelectronics STEVAL-ISA068V1Obsolete | Development Boards Kits Programmers | EVAL BOARD FOR ST1S32 |
 STMicroelectronics 74VCXHQ163245TTRObsolete | Integrated Circuits (ICs) | IC TRANSLATION TXRX 2.7V 48TSSOP |
 STMicroelectronics | Development Boards Kits Programmers | VNQ9050LAJ EVALUATION BOARD |
 STMicroelectronics LSM303DLHCTRObsolete | Sensors Transducers | IMU ACCEL/MAG 3-AXIS I2C 14LGA |
 STMicroelectronics M93C56-WMN6TObsolete | Integrated Circuits (ICs) | EEPROM SERIAL-MICROWIRE 2K-BIT 256 X 8/128 X 16 3.3V/5V 8-PIN SO N T/R |
STMicroelectronics | Integrated Circuits (ICs) | STM32U |
 STMicroelectronics TS831-3IZObsolete | Integrated Circuits (ICs) | IC SUPERVISOR 1 CHANNEL TO92-3 |
 STMicroelectronics STMPE1208SQTRObsolete | Integrated Circuits (ICs) | IC I/O EXPANDER I2C 12B 40QFN |
 STMicroelectronics STM32L1-MAGNETObsolete | Development Boards Kits Programmers | IAR EXPERIMENT STM32 L1 EVAL BRD |
 STMicroelectronics VNB35N07Obsolete | Integrated Circuits (ICs) | IC PWR DRIVER N-CHAN 1:1 D2PAK |
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
STD7ANM60NN-channel 600 V, 800 mOhm typ., 5 A MDmesh II Power MOSFET in a DPAK package | Single FETs, MOSFETs | 1 | Active | This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. |
STD7LN80K5N-channel 800 V, 0.95 Ohm typ., 5 A MDmesh K5 Power MOSFET in a DPAK package | Discrete Semiconductor Products | 1 | Active | This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. |
STD7N52K3N-channel 525 V, 0.72 Ohm, 6 A, DPAK SuperMESH3(TM) Power MOSFET | Transistors | 1 | Active | This MDmesh K3 Power MOSFET is the result of improvements applied to STMicroelectronics’ MDmesh technology, combined with a new optimized vertical structure. This device boasts an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering it suitable for the most demanding applications. |
STD7N60M2N-channel 600 V, 0.86 Ohm typ., 5 A MDmesh M2 Power MOSFET in DPAK package | Discrete Semiconductor Products | 1 | Active | These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters. |
STD7N60M6N-channel 600 V, 780 mOhm typ., 5 A MDmesh M6 Power MOSFET in a DPAK package | Single FETs, MOSFETs | 1 | Active | The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on)per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency. |
STD7N65N-channel 650 V, 0.98 Ohm typ., 5 A MDmesh M2 Power MOSFET in a DPAK package | Discrete Semiconductor Products | 2 | Active | This device is an N-channel Power MOSFET developed using the MDmesh™ M2 technology. Thanks to the strip layout associated to an improved vertical structure, the device exhibits both low on-resistance and optimized switching characteristics. It is therefore suitable for the most demanding high efficiency converters. |
STD7N80K5N-channel 800 V, 0.95 Ohm typ., 6 A MDmesh K5 Power MOSFET in DPAK package | FETs, MOSFETs | 1 | Active | This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. |
STD7N95K5AGAutomotive-grade N-channel 950 V, 0.95 Ohm typ., 9 A MDmesh K5 Power MOSFET in a DPAK package | FETs, MOSFETs | 1 | Active | This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. |
| Single FETs, MOSFETs | 1 | Active | ||
STD7NM60NN-channel 600 V, 0.8 Ohm typ., 5 A MDmesh II Power MOSFET in DPAK package | FETs, MOSFETs | 1 | Active | This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. |