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STMicroelectronics
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
Beta
⌘K
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
| Part | Category | Description |
|---|---|---|
 STMicroelectronics STEVAL-ISA068V1Obsolete | Development Boards Kits Programmers | EVAL BOARD FOR ST1S32 |
 STMicroelectronics 74VCXHQ163245TTRObsolete | Integrated Circuits (ICs) | IC TRANSLATION TXRX 2.7V 48TSSOP |
 STMicroelectronics | Development Boards Kits Programmers | VNQ9050LAJ EVALUATION BOARD |
 STMicroelectronics LSM303DLHCTRObsolete | Sensors Transducers | IMU ACCEL/MAG 3-AXIS I2C 14LGA |
 STMicroelectronics M93C56-WMN6TObsolete | Integrated Circuits (ICs) | EEPROM SERIAL-MICROWIRE 2K-BIT 256 X 8/128 X 16 3.3V/5V 8-PIN SO N T/R |
STMicroelectronics | Integrated Circuits (ICs) | STM32U |
 STMicroelectronics TS831-3IZObsolete | Integrated Circuits (ICs) | IC SUPERVISOR 1 CHANNEL TO92-3 |
 STMicroelectronics STMPE1208SQTRObsolete | Integrated Circuits (ICs) | IC I/O EXPANDER I2C 12B 40QFN |
 STMicroelectronics STM32L1-MAGNETObsolete | Development Boards Kits Programmers | IAR EXPERIMENT STM32 L1 EVAL BRD |
 STMicroelectronics VNB35N07Obsolete | Integrated Circuits (ICs) | IC PWR DRIVER N-CHAN 1:1 D2PAK |
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Transistors | 1 | Active | ||
| Single FETs, MOSFETs | 1 | Active | ||
| Single FETs, MOSFETs | 1 | Obsolete | ||
STD9N40M2N-channel 400 V, 0.59 Ohm typ., 6 A MDmesh M2 Power MOSFET in a DPAK package | FETs, MOSFETs | 1 | Active | This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. |
STD9N65M2N-channel 650 V, 0.79 Ohm typ., 5 A MDmesh M2 Power MOSFET in DPAK package | FETs, MOSFETs | 1 | Active | These devices are N-channel Power MOSFETs developed using the MDmesh M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters. |
STD9N80K5N-channel 800 V, 730 mOhm typ., 7 A MDmesh K5 Power MOSFET in a DPAK package | Discrete Semiconductor Products | 1 | Active | This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. |
STD9NM40NN-channel 400 V, 0.73 Ohm typ., 5.6 A MDmesh(TM) II Power MOSFET in a DPAK package | Transistors | 1 | NRND | These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. |
| Single FETs, MOSFETs | 2 | Obsolete | ||
| Transistors | 1 | Active | ||
STDRIVE101Triple half-bridge gate driver | Gate Drivers | 2 | Active | The STDRIVE101 is a low voltage gate driver suitable for driving three-phase brushless motors.
It is a single-chip with three half-bridge gate drivers for N-channel power MOSFETs. Each driver has a current capability of 600 mA (sink/source). It integrates a low drop linear regulator generating the supply voltage for both low-side and high-side gate drivers through a bootstrap circuitry.
The device provides Under Voltage Lock Out (UVLO) on both the low-side and high-side sections, preventing the power switches from operating in low efficiency or dangerous conditions.
The control logic integrated into the STDRIVE101 allows two input strategies (high-side and low-side or enable and PWM driving signals). The driving method is selected according to DT/MODE pin. In both cases, prevention from cross conduction is ensured by interlocking or internally generated deadtime.
The STDRIVE101 also features a VDSmonitoring protection for each external MOSFET, thermal shutdown and can be put in the standby mode to reduce the power consumption.
The device is available in a VFQFPN 4x4 24 leads package option. |