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STMicroelectronics
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
Beta
⌘K
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
| Part | Category | Description |
|---|---|---|
 STMicroelectronics STEVAL-ISA068V1Obsolete | Development Boards Kits Programmers | EVAL BOARD FOR ST1S32 |
 STMicroelectronics 74VCXHQ163245TTRObsolete | Integrated Circuits (ICs) | IC TRANSLATION TXRX 2.7V 48TSSOP |
 STMicroelectronics | Development Boards Kits Programmers | VNQ9050LAJ EVALUATION BOARD |
 STMicroelectronics LSM303DLHCTRObsolete | Sensors Transducers | IMU ACCEL/MAG 3-AXIS I2C 14LGA |
 STMicroelectronics M93C56-WMN6TObsolete | Integrated Circuits (ICs) | EEPROM SERIAL-MICROWIRE 2K-BIT 256 X 8/128 X 16 3.3V/5V 8-PIN SO N T/R |
STMicroelectronics | Integrated Circuits (ICs) | STM32U |
 STMicroelectronics TS831-3IZObsolete | Integrated Circuits (ICs) | IC SUPERVISOR 1 CHANNEL TO92-3 |
 STMicroelectronics STMPE1208SQTRObsolete | Integrated Circuits (ICs) | IC I/O EXPANDER I2C 12B 40QFN |
 STMicroelectronics STM32L1-MAGNETObsolete | Development Boards Kits Programmers | IAR EXPERIMENT STM32 L1 EVAL BRD |
 STMicroelectronics VNB35N07Obsolete | Integrated Circuits (ICs) | IC PWR DRIVER N-CHAN 1:1 D2PAK |
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
STD6N95K5N-channel 950 V, 1 Ohm typ., 9 A MDmesh K5 Power MOSFET in a DPAK package | Discrete Semiconductor Products | 1 | Active | This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. |
| Discrete Semiconductor Products | 1 | Obsolete | ||
STD7N-channel 800 V, 0.95 Ohm, 6.5 A MDmesh Power MOSFET in DPAK package | Single | 4 | Active | MDmesh technology applies the benefits of the multiple drain process to STMicroelectronics well-known PowerMESH horizontal layout structure. The resulting product offers low onresistance, high dv/dt capability and excellent avalanche characteristics. |
| Single | 2 | Obsolete | ||
STD70N10F4N-channel 100 V, 0.015 Ohm, 60 A, STripFET(TM) DeepGATE(TM) Power MOSFET in DPAK | Transistors | 1 | Active | This STripFET DeepGATE Power MOSFET technology is among the latest improvements, which have been especially tailored to minimize on-state resistance, with a new gate structure, providing superior switching performance. |
STD70NS04ZLN-channel 33 V clamped, 9.5 mOhm typ., 70 A fully protected SAFeFET Power MOSFET in a DPAK package | Single FETs, MOSFETs | 1 | Active | This fully clamped Power MOSFET is produced by using the latest advanced companys Mesh OVERLAY process which is based on a novel strip layout. The inherent benefits of the new technology coupled with the extra clamping capabilities make this product particularly suitable for the harshest operation conditions such as those encountered in the automotive environment. Any other application requiring extra ruggedness is also recommended. |
STD70R1K3SN-channel 700 V, 1.3 Ohm typ., 5 A Power MOSFET in a DPAK package | Single FETs, MOSFETs | 1 | Active | This device is an high voltage N-channel Power MOSFET. This product offers improved on-resistance, low gate charge, high dv/dt capability and excellent avalanche characteristics. |
| Transistors | 1 | Obsolete | ||
| Transistors | 1 | Obsolete | ||
| Transistors | 1 | Obsolete | ||