STD44N4LF6 Series

N-channel 40 V, 8.9 mOhm, 44 A , DPAK STripFET(TM) VI DeepGATE(TM) Power MOSFET

Catalog

N-channel 40 V, 8.9 mOhm, 44 A , DPAK STripFET(TM) VI DeepGATE(TM) Power MOSFET

Part	Rds On (Max) @ Id, Vgs	Technology	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Max]	Operating Temperature [Min]	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Package / Case	Mounting Type	Vgs(th) (Max) @ Id	FET Type	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)
STMicroelectronics STD44N4LF6	12.5 mOhm	MOSFET (Metal Oxide)	40 V	5 V 10 V	175 °C	-55 °C	44 A	DPAK	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount	2.5 V	N-Channel	20 V	1190 pF	22 nC	50 W

Catalog

N-channel 40 V, 8.9 mOhm, 44 A , DPAK STripFET(TM) VI DeepGATE(TM) Power MOSFET

Description

This device is an N-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on)in all packages.