STMicroelectronics

The M95M04-A125 and M95M04-A145 are 4-Mbit serial EEPROM automotive grade devices operating up to 145 °C. They are compliant with the very high level of reliability defined by the automotive standard AEC-Q100 grade 0. The devices are accessed by a simple serial SPI compatible interface running at up to 10 MHz. The memory array is based on advanced true EEPROM technology (electrically erasable programmable memory). The M95M04-A125 and M95M04-A145 are byte-alterable memories (524288 × 8 bits) organized as 1024 pages of 512 bytes in which the data integrity is significantly improved with an embedded error correction code logic. The M95M04-A125 and M95M04-A145 offer an additional identification page (512 bytes) in which the ST device identification can be read. This page can also be used to store sensitive application parameters that can later be permanently locked in read-only mode.

The M95M04-A125 and M95M04-A145 are 4-Mbit serial EEPROM automotive grade devices operating up to 145 °C. They are compliant with the very high level of reliability defined by the automotive standard AEC-Q100 grade 0. The devices are accessed by a simple serial SPI compatible interface running at up to 10 MHz. The memory array is based on advanced true EEPROM technology (electrically erasable programmable memory). The M95M04-A125 and M95M04-A145 are byte-alterable memories (524288 × 8 bits) organized as 1024 pages of 512 bytes in which the data integrity is significantly improved with an embedded error correction code logic. The M95M04-A125 and M95M04-A145 offer an additional identification page (512 bytes) in which the ST device identification can be read. This page can also be used to store sensitive application parameters that can later be permanently locked in read-only mode.

The M95P08-I and M95P08-E are manufactured with ST's advanced proprietary NVM technology. They offer byte flexibility, page alterability, high page cycling performance, and ultra‑low power consumption, equivalent to that of EEPROM technology. The M95P08-I and M95P08-E are an 8-Mbit SPI page EEPROM device organized as 2048 programmable pages of 512 bytes each, accessed through an SPI bus with high-performance dual- and quad SPI outputs. The devices offer two additional (identification) 512-byte pages: Additional status, configuration, and volatile registers set the desired device configuration, while the safety register provides information on the device status. The M95P08-I operates with a supply voltage from 1.6 to 3.6 V over an ambient temperature range of -40 °C to +85 °C. The M95P08-E offers an extended temperature range from -40 °C to +105 °C. The device supports a clock frequency of up to 80 MHz. The M95P08-I and M95P08-E offer byte and page write instructions of up to 512 bytes. Write instructions consist in self-timed auto erase and program operations, resulting in flexible data byte management. The devices also accept page/block/sector/chip erase commands to set the memory to an erased state. The memory can then be fast-programmed by 512-byte pages, and further optimized using the Page program with buffer load instruction to hide the SPI communication latency.

The M95P08-I and M95P08-E are manufactured with ST's advanced proprietary NVM technology. They offer byte flexibility, page alterability, high page cycling performance, and ultra‑low power consumption, equivalent to that of EEPROM technology. The M95P08-I and M95P08-E are an 8-Mbit SPI page EEPROM device organized as 2048 programmable pages of 512 bytes each, accessed through an SPI bus with high-performance dual- and quad SPI outputs. The devices offer two additional (identification) 512-byte pages: Additional status, configuration, and volatile registers set the desired device configuration, while the safety register provides information on the device status. The M95P08-I operates with a supply voltage from 1.6 to 3.6 V over an ambient temperature range of -40 °C to +85 °C. The M95P08-E offers an extended temperature range from -40 °C to +105 °C. The device supports a clock frequency of up to 80 MHz. The M95P08-I and M95P08-E offer byte and page write instructions of up to 512 bytes. Write instructions consist in self-timed auto erase and program operations, resulting in flexible data byte management. The devices also accept page/block/sector/chip erase commands to set the memory to an erased state. The memory can then be fast-programmed by 512-byte pages, and further optimized using the Page program with buffer load instruction to hide the SPI communication latency.

The M95P16-I and M95P16-E (hereinafter referred to complessively as M95P16) are manufactured with ST's advanced proprietary NVM technology. They offer byte flexibility, page alterability, high page cycling performance, and ultra low power consumption, equivalent to that of EEPROM technology. These devices are a 16-Mbit SPI page EEPROM, organized as 4096 programmable pages of 512 bytes each, accessed through an SPI bus, with high-performance dual- and quad-SPI outputs. The devices offer two additional (identification) 512-byte pages: Additional status, configuration and volatile registers set the desired device configuration, while the safety register provides information on the device status. The M95P16-I operates with a supply voltage from 1.6 to 3.6 V, over an ambient temperature range of ‑40 °C to +85 °C. The M95P16-E offers an extended temperature range, from ‑40 °C to +105 °C. Both devices support a clock frequency of up to 80 MHz. The M95P16 devices offer byte and page write instructions of up to 512 bytes. Write instructions consist in self-timed auto erase and program operations, resulting in flexible data byte management. The devices also accept page/block/sector/chip erase commands, to set the memory to an erased state. The memory can then be fast-programmed by 512-byte pages, and further optimized using the Page program with buffer load instruction, to hide the SPI communication latency.

The MASTERGAN1 is an advanced power system-in-package integrating a gate driver and two enhancement mode GaN transistors in half‑bridge configuration. The integrated power GaNs have RDS(ON)of 150 mΩ and 650 V drain‑source breakdown voltage, while the high side of the embedded gate driver can be easily supplied by the integrated bootstrap diode. The MASTERGAN1 features UVLO protection on both the lower and upper driving sections, preventing the power switches from operating in low efficiency or dangerous conditions, and the interlocking function avoids cross-conduction conditions. The input pins extended range allows easy interfacing with microcontrollers, DSP units or Hall effect sensors. The MASTERGAN1 operates in the industrial temperature range, -40°C to 125°C. The device is available in a compact 9x9 mm QFN package.

The MASTERGAN1L is an advanced power system-in-package integrating a gate driver and two enhancement mode GaN transistors in half‑bridge configuration. The integrated power GaNs have RDS(ON) of 150 mΩ, 650 V drain‑source blocking voltage, while the high side of the embedded gate driver can be easily supplied by the integrated bootstrap diode. The MASTERGAN1L features UVLO protection on VCC, preventing the power switches from operating in low efficiency or dangerous conditions, and the interlocking function avoids cross-conduction conditions. The input pins extended range allows easy interfacing with analog controllers, microcontrollers and DSP units. The MASTERGAN1L operates in the industrial temperature range, -40°C to 125°C. The device is available in a compact 9x9 mm QFN package.

The MASTERGAN2 is an advanced power system-in-package integrating a gate driver and two enhancement mode GaN transistors in asymmetrical half‑bridge configuration. The integrated power GaNs have 650 V drain‑source blocking voltage and RDS(ON)of 150 mΩ and 225 mΩ for Low side and High side respectively, while the high side of the embedded gate driver can be easily supplied by the integrated bootstrap diode. The MASTERGAN2 features UVLO protection on both the lower and upper driving sections, preventing the power switches from operating in low efficiency or dangerous conditions, and the interlocking function avoids cross-conduction conditions. The input pins extended range allows easy interfacing with microcontrollers, DSP units or Hall effect sensors. The MASTERGAN2 operates in the industrial temperature range, -40°C to 125°C. The device is available in a compact 9x9 mm QFN package.

The MASTERGAN3 is an advanced power system-in-package integrating a gate driver and two enhancement mode GaN transistors in asymmetrical half‑bridge configuration. The integrated power GaNs have 650 V drain‑source blocking voltage and RDS(ON)of 225 mΩ and 450 mΩ for Low side and High side respectively, while the high side of the embedded gate driver can be easily supplied by the integrated bootstrap diode, while the high side of the embedded gate driver can be easily supplied by the integrated bootstrap diode. The MASTERGAN3 features UVLO protection on both the lower and upper driving sections, preventing the power switches from operating in low efficiency or dangerous conditions, and the interlocking function avoids cross-conduction conditions. The input pins extended range allows easy interfacing with microcontrollers, DSP units or Hall effect sensors. The MASTERGAN3 operates in the industrial temperature range, -40°C to 125°C. The device is available in a compact 9x9 mm QFN package.