MASTERGAN2 Series
High power density 600V Half bridge driver with two enhancement mode GaN HEMTs
Manufacturer: STMicroelectronics
Catalog
High power density 600V Half bridge driver with two enhancement mode GaN HEMTs
| Part | Applications | Operating Temperature [Max] | Operating Temperature [Min] | Mounting Type | Package / Case | Voltage - Supply [Min] | Voltage - Supply [Max] | Supplier Device Package | Technology | Voltage - Load [Max] | Load Type | Rds On (Typ) | Current - Peak Output | Current - Output / Channel | Fault Protection | Features |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 STMicroelectronics | Power Supplies | 125 °C | -40 °C | Surface Mount | 31-VQFN Exposed Pad | 3.3 V | 15 V | 31-QFN (9x9) | ||||||||
 STMicroelectronics | General Purpose | 125 ¯C | -40 °C | Surface Mount | 31-VQFN Exposed Pad | 4.75 V | 4.75 V | 31-QFN (9x9) | DMOS | 600 V | Capacitive Inductive | 150 mOhm 225 mOhm | 17 A | 6.5 A 10 A | Over Temperature UVLO | Bootstrap Circuit |
Key Features
• 600 V system-in-package integrating half-bridge gate driver and high-voltage power GaN transistors in asymmetrical configuration:
- QFN 9 x 9 x 1 mm package
- RDS(ON)= 150 mΩ (LS) + 225 mΩ (HS)
- IDS(MAX)= 10 A (LS) + 6.5 A (HS)
Description
AI
The MASTERGAN2 is an advanced power system-in-package integrating a gate driver and two enhancement mode GaN transistors in asymmetrical half‑bridge configuration.
The integrated power GaNs have 650 V drain‑source blocking voltage and RDS(ON)of 150 mΩ and 225 mΩ for Low side and High side respectively, while the high side of the embedded gate driver can be easily supplied by the integrated bootstrap diode.
The MASTERGAN2 features UVLO protection on both the lower and upper driving sections, preventing the power switches from operating in low efficiency or dangerous conditions, and the interlocking function avoids cross-conduction conditions.
The input pins extended range allows easy interfacing with microcontrollers, DSP units or Hall effect sensors.
The MASTERGAN2 operates in the industrial temperature range, -40°C to 125°C.
The device is available in a compact 9x9 mm QFN package.