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STMicroelectronics

Series	Category	# Parts	Status	Description

Part	Spec A	Spec B	Spec C	Spec D	Description

Standalone parts(2458)

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Part	Category	Description
STMicroelectronics EMIF09-SD01F3Obsolete	Filters	FILTER RC(PI) 40 OHM/20PF SMD
STMicroelectronics STM32F412ZGJ7	Integrated Circuits (ICs)	STM32 DYNAMIC EFFICIENCY MCU WITH BAM, HIGH-PERFORMANCE AND DSP WITH FPU, ARM CORTEX-M4 MCU WITH 1 MBYTE OF FLASH MEMORY, 100 MHZ CPU, ART ACCELERATOR, DFSDM
STMicroelectronics SPC560D40L1B3E0X	Integrated Circuits (ICs)	32-BIT POWER ARCHITECTURE MCU FOR AUTOMOTIVE BODY AND GATEWAY APPLICATIONS
STMicroelectronics SPC560D30L1B4E0X	Integrated Circuits (ICs)	MCU 32-BIT E200Z0H RISC 128KB FLASH 3.3V/5V AUTOMOTIVE AEC-Q100 64-PIN LQFP T/R
STMicroelectronics STEVAL-CCA036V1	Development Boards Kits Programmers	DEMONSTRATION BOARD FOR SINGLE CHANNEL OP-AMP IN SO8 PACKAGE
STMicroelectronics LDLN025J30RLTB	Integrated Circuits (ICs)	IC REG LINEAR 3V 250MA 4FLIPCHIP
STMicroelectronics ST25RU3993-EVALObsolete	Development Boards Kits Programmers	ST25RU3993 READER IC EVALUATION BOARD
STMicroelectronics STM32F401CBY6TT	Integrated Circuits (ICs)	ARM-BASED 32-BIT MCU+FPU, 84MHZ, 128KB FLASH, 49-PIN WLCSP, -40 TO 85°C T/R
STMicroelectronics STP12NM60NObsolete	Discrete Semiconductor Products	MOSFET N-CH 600V 10A TO220AB
STMicroelectronics VND1NV04Obsolete	Integrated Circuits (ICs)	IC PWR DRIVER N-CHANNEL 1:1 DPAK

Series	Category	# Parts	Status	Description

STF10N105K5N-channel 650 V, 0.75 Ohm typ., 10 A Zener-protected SuperMESH3(TM) Power MOSFET in TO-220FP package	Single FETs, MOSFETs	7	Active	These N-channel Zener-protected Power MOSFETs are designed using ST’s revolutionary avalanche-rugged very high voltage SuperMESH™ 5 technology, based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance, and ultra-low gate charge for applications which require superior power density and high efficiency.
STF10P	Transistors	1	Obsolete
STF11N60M2-EPN-channel 600 V, 0.550 Ohm typ., 7.5 A MDmesh M2 EP Power MOSFET in a TO-220FP package	Single FETs, MOSFETs	5	Active	These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market.
STF12N50M2N-channel 500 V, 325 mOhm typ., 10 A MDmesh M2 Power MOSFET in a TO-220FP package	Single FETs, MOSFETs	5	Active	This device is an N-channel Power MOSFET developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. This revolutionary Power MOSFET associates a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
STF140N6F7N-channel 60 V, 0.0031 Ohm typ., 70 A STripFET F7 Power MOSFET in a TO-220FP package	Discrete Semiconductor Products	1	Active	This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
STF14N80K5N-channel 800 V, 0.400 Ohm typ., 12 A MDmesh K5 Power MOSFET in a TO-220FP package	Discrete Semiconductor Products	2	Active	These very high voltage N-channel Power MOSFET are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
STF15NM65NN-channel 650 V, 0.35 Ohm typ., 12 A MDmesh II Power MOSFET in TO-220FP package	Single	3	Active	These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFETs associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
STF16N50M2N-channel 500 V, 0.24 Ohm typ., 13 A MDmesh M2 Power MOSFET in a TO-220FP package	Single	5	Active	These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.
STF17N80K5N-channel 800 V, 0.29 Ohm typ., 14 A MDmesh K5 Power MOSFET in a TO-220FP package	Single	3	Active	This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
STF18N65M2N-channel 650 V, 0.275 Ohm typ., 12 A MDmesh M2 Power MOSFET in a TO-220FP package	Single	3	Active	This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.