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Rohm Semiconductor
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
| Part | Category | Description |
|---|---|---|
Rohm Semiconductor | Optoelectronics | LED GREEN CLEAR T-1 T/H |
Rohm Semiconductor MCR10EZPF8252Unknown | Resistors | RES SMD 82.5K OHM 1% 1/8W 0805 |
Rohm Semiconductor | Resistors | RES SMD 33K OHM 5% 1/4W 1206 |
Rohm Semiconductor | Resistors | RES 910K OHM 5% 1/4W 0603 |
Rohm Semiconductor MCR03EZPFX2260Unknown | Resistors | RES SMD 226 OHM 1% 1/10W 0603 |
Rohm Semiconductor ESR10EZPF4121NRND | Resistors | RES 4.12K OHM 1% 2/5W 0805 |
Rohm Semiconductor MCR25JZHFLR270Unknown | Resistors | RES 0.27 OHM 1% 1/2W 1210 |
Rohm Semiconductor ESR10EZPF4R32NRND | Resistors | RES 4.32 OHM 1% 1/2W 0805 |
Rohm Semiconductor MCR18EZPJ1R6Unknown | Resistors | RES SMD 1.6 OHM 5% 1/4W 1206 |
Rohm Semiconductor | Resistors | RES, 240K, 1%, 0.25W, THICK FILM, 0603 ROHS COMPLIANT: YES |
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
BM2SC123FP2-LBZQuasi-resonant AC/DC Converter Built-in 1700 V SiC-MOSFET | Integrated Circuits (ICs) | 1 | Active | This is the product guarantees long time support in industrial market. BM2SC12xFP2-LBZ series is a quasi-resonant AC/DC converter that provides an optimum system for all products which has an electrical outlet. Quasi-resonant operation enables soft switching and helps to keep the EMI low. This IC can be designed easily because it includes the 1700V SiC (Silicon-Carbide) MOSFET. Design with a high degree of flexibility is achieved with current detection resistors as external devices. The burst operation reduces an electric power at light load. BM2SC12xFP2-LBZ series includes various protection functions, such as soft start function, burst operation function, over current limiter per cycle, over voltage protection, overload protection. FB OLP is Auto Restart type, VCC OVP is Latch type.Clickherefor the board designed to fully evaluate BM2SC123FP2-LBZ. In addition you can choose from a variety of power and topologyevaluation boards. |
| Power Management (PMIC) | 1 | Active | ||
BM2SC125FP2-LBZQuasi-resonant AC/DC Converter Built-in 1700V SiC-MOSFET | Power Management (PMIC) | 1 | Active | This is the product guarantees long time support in industrial market. BM2SC125FP2-LBZ is a quasi-resonant AC/DC converter that provides an optimum system for all products which has an electrical outlet. Quasi-resonant operation enables soft switching and helps to keep the EMI low. This IC can be designed easily because it includes the 1700V SiC (Silicon-Carbide) MOSFET. Design with a high degree of flexibility is achieved with current detection resistors as external devices. The burst operation reduces an electric power at light load. BM2SC125FP2-LBZ includes various protection functions, such as soft start function, burst operation function, over current limiter per cycle, over voltage protection, overload protection. |
BM2SCQ121T-LBZQuasi-resonant AC/DC Converter with Built-in 1700 V SiC-MOSFET | Power Management (PMIC) | 1 | Active | BM2SCQ121T-LBZ is a quasi-resonant AC/DC converter that provides an optimum system for all products which has an electrical outlet. Quasi-resonant operation enables soft switching and helps to keep the EMI low. This IC can be designed easily because it includes the 1700 V/4 A SiC (Silicon-Carbide) MOSFET. Design with a high degree of flexibility is achieved with current detection resistors as external devices. The burst operation reduces an input power at light load. It includes various protection functions, such as soft start function, burst operation, over current limiter per cycle, over-voltage protection function, overload protection function.You can choose from a variety of power and topologyevaluation boards. |
BM2SCQ122T-LBZQuasi-resonant AC/DC Converter with Built-in 1700 V SiC-MOSFET | Power Management (PMIC) | 1 | Active | BM2SCQ122T-LBZ is a quasi-resonant AC/DC converter that provides an optimum system for all products which has an electrical outlet. Quasi-resonant operation enables soft switching and helps to keep the EMI low. This IC can be designed easily because it includes the 1700 V/4 A SiC (Silicon-Carbide) MOSFET. Design with a high degree of flexibility is achieved with current detection resistors as external devices. The burst operation reduces an input power at light load. It includes various protection functions, such as soft start function, burst operation, over current limiter per cycle, over-voltage protection function, overload protection function.You can choose from a variety of power and topologyevaluation boards. |
BM2SCQ123Quasi-resonant AC/DC Converter with Built-in 1700 V SiC-MOSFET | Power Management (PMIC) | 2 | Active | BM2SCQ123T-LBZ is a quasi-resonant AC/DC converter that provides an optimum system for all products which has an electrical outlet. Quasi-resonant operation enables soft switching and helps to keep the EMI low. This IC can be designed easily because it includes the 1700 V/4 A SiC (Silicon-Carbide) MOSFET. Design with a high degree of flexibility is achieved with current detection resistors as external devices. The burst operation reduces an input power at light load. It includes various protection functions, such as soft start function, burst operation, over current limiter per cycle, over-voltage protection function, overload protection function.Clickherefor the board designed to fully evaluate BM2SCQ123T-LBZ. In addition you can choose from a variety of power and topologyevaluation boards. |
BM2SCQ124Quasi-resonant AC/DC Converter with Built-in 1700 V SiC-MOSFET | Power Management (PMIC) | 1 | Active | BM2SCQ124T-LBZ is a quasi-resonant AC/DC converter that provides an optimum system for all products which has an electrical outlet. Quasi-resonant operation enables soft switching and helps to keep the EMI low. This IC can be designed easily because it includes the 1700 V/4 A SiC (Silicon-Carbide) MOSFET. Design with a high degree of flexibility is achieved with current detection resistors as external devices. The burst operation reduces an input power at light load. It includes various protection functions, such as soft start function, burst operation, over current limiter per cycle, over-voltage protection function, overload protection function.You can choose from a variety of power and topologyevaluation boards. |
BM3G005MUV-LBNano Cap™, EcoGaN™, 650V 50mΩ 2MHz, GaN HEMT Power Stage IC | Integrated Circuits (ICs) | 1 | Active | This product is a rank product for the industrial equipment market. This is the best product for use in these applications. BM3G005MUV-LB provides an optimum solution for all electronics systems that requires high power density and efficiency. By integrating the 650 V enhancement GaN HEMT and silicon driver to ROHM’s original package, parasitic inductance caused by a PCB and wire bonding is reduced significantly compared to traditional discrete solutions. Owing to this, a high switching slew rate up to 150 V/ns can be achieved. On the other hand, adjustable gate drive strength contributes to low EMI, and various protections and other additional functions provide optimized cost, PCB size. This IC is designed to adapt major exist controllers, so that it also can be used to replace the traditional discrete power switches, such as super junction MOSFET. |
BM3G007MUV-LBNano Cap™, EcoGaN™, 650V 70mΩ 2MHz, GaN HEMT Power Stage IC | Integrated Circuits (ICs) | 1 | Active | This is the product guarantees long time support in industrial market. BM3G007MUV-LB provides an optimum solution for all electronics systems that requires high power density and efficiency. By integrating the 650V enhancement GaN HEMT and silicon driver to ROHM’s original package, parasitic inductance caused by a PCB and wire bonding is reduced significantly compared to traditional discrete solutions. Owing to this, a high switching slew rate up to 150V/ns can be achieved. On the other hand, adjustable gate drive strength contributes to low EMI, and various protections and other additional functions provide optimized cost, PCB size. This IC is designed to adapt major exist controllers, so that it also can be used to replace the traditional discrete power switches, such as super junction MOSFET. |
BM3G015MUV-LBNano Cap™, EcoGaN™, 650V 150mΩ 2MHz, GaN HEMT Power Stage IC | Integrated Circuits (ICs) | 1 | Active | This is the product guarantees long time support in industrial market. BM3G015MUV-LB provides an optimum solution for all electronics systems that requires high power density and efficiency. By integrating the 650V enhancement GaN HEMT and silicon driver to ROHM’s original package, parasitic inductance caused by a PCB and wire bonding is reduced significantly compared to traditional discrete solutions. Owing to this, a high switching slew rate up to 150V/ns can be achieved. On the other hand, adjustable gate drive strength contributes to low EMI, and various protections and other additional functions provide optimized cost, PCB size. This IC is designed to adapt major exist controllers, so that it also can be used to replace the traditional discrete power switches, such as super junction MOSFET. |