BM3G015MUV-LB Series

Nano Cap™, EcoGaN™, 650V 150mΩ 2MHz, GaN HEMT Power Stage IC

Catalog

Nano Cap™, EcoGaN™, 650V 150mΩ 2MHz, GaN HEMT Power Stage IC

Part	Voltage - Load	Mounting Type	Output Configuration	Input Type	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Voltage - Supply (Vcc/Vdd) [Max]	Voltage - Supply (Vcc/Vdd) [Min]	Ratio - Input:Output [custom]	Output Type	Rds On (Typ)	Switch Type	Number of Outputs	Fault Protection	Package / Case	Features
Rohm Semiconductor BM3G015MUV-LBE2	650 V	Surface Mount Wettable Flank	Low Side	Non-Inverting	-40 °C	105 ░C	VQFN046V8080	30 V	6.25 V	1:1	N-Channel	150 mOhm	General Purpose	1	Over Temperature UVLO	46-VFQFN Exposed Pad	Power Good Slew Rate Controlled

Catalog

Nano Cap™, EcoGaN™, 650V 150mΩ 2MHz, GaN HEMT Power Stage IC

Key Features

• Nano Cap™ Integrated Output Selectable 5V LDO, Long Time Support Product for Industrial Applications, Wide Operating Range for VDD Pin Voltage, Wide Operating Range for IN Pin Voltage, Low VDD Quiescent and Operating Current, Low Propagation Delay, High dv/dt Immunity, Adjustable Gate Drive Strength, Power Good Signal Output, VDD UVLO Protection, Thermal Shutdown Protection

Description

This is the product guarantees long time support in industrial market. BM3G015MUV-LB provides an optimum solution for all electronics systems that requires high power density and efficiency. By integrating the 650V enhancement GaN HEMT and silicon driver to ROHM’s original package, parasitic inductance caused by a PCB and wire bonding is reduced significantly compared to traditional discrete solutions. Owing to this, a high switching slew rate up to 150V/ns can be achieved. On the other hand, adjustable gate drive strength contributes to low EMI, and various protections and other additional functions provide optimized cost, PCB size. This IC is designed to adapt major exist controllers, so that it also can be used to replace the traditional discrete power switches, such as super junction MOSFET.