Renesas Electronics Corporation

The 5962-85525 (7164 SRAM) is organized as 8K x 8 and offers a reduced power standby mode. This version also offers a battery backup data retention capability at power supply levels as low as 2V. All inputs and outputs are TTL-compatible and operation is from a single 5V supply, simplifying system designs. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation.

The 5962-87002 (IDT 7132/42) is a high-speed 2K x 8 Dual-Port Static RAM designed to be used as a stand-alone 8-bit Dual-Port RAM or as a "MASTER" Dual-Port RAM together with a "SLAVE" Dual-Port in 16-bit-or-more word width systems which would result in full-speed, error free operation without the need for additional discrete logic. An automatic power down feature, controlled by CE, permits the on chip circuitry of each port to enter a very low standby power mode. Military grade product in compliance with MIL-PRF-38535 QML.

The 5962-87531 (IDT 7201) is a 512 x 9 dual-port FIFO memory that loads and empties data on a first-in/first-out basis. The device uses Full and Empty flags to prevent data overflow and underflow. It has a Retransmit (RT) capability that allows for reset of the read pointer to its initial position when RT is pulsed LOW. It is designed for those applications requiring asynchronous and simultaneous read/writes in multiprocessing and rate buffer applications.

The 5962-88610 (7133/43) is a high-speed 2K x 16 dual-port static RAM. Using the Master/Slave dual-port RAM approach in 32-bit or wider memory system applications results in full-speed, error-free operation without the need for additional discrete logic. The military-grade product complies with MIL-PRF-38535 QML.

The 5962-88662 (71256 SRAM) is organized as 32K x 8. This part offers a reduced power standby mode for significant system level power and cooling savings. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation.