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ON Semiconductor

Series	Category	# Parts	Status	Description

Part	Spec A	Spec B	Spec C	Spec D	Description

Standalone parts(10272)

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Part	Category	Description
ON Semiconductor NCV8402AMNWT1G	Integrated Circuits (ICs)	SELF-PROTECTED N-CHANNEL POWER MOSFET/ REEL
ON Semiconductor 74AC32PCObsolete	Integrated Circuits (ICs)	IC GATE OR 4CH 2-INP 14MDIP
ON Semiconductor FGI3236-F085	Discrete Semiconductor Products	IGBT, 360V, 27A, 1.32V, 320MJ, TO-262<BR>ECOSPARK® I, N-CHANNEL IGNITION
ON Semiconductor FAN1655MTFXObsolete	Integrated Circuits (ICs)	IC REG CTRLR DDR 1OUT 16TSSOP
ON Semiconductor FIN1027MObsolete	Integrated Circuits (ICs)	LVDS DRIVER, LVDS DIFFERENTIAL DRIVER, -40 °C, 85 °C, 3 V, 3.6 V, SOIC
ON Semiconductor TMC2111AR3C	Integrated Circuits (ICs)	PIPELINE REGISTER, 8-BIT PQCC28
ON Semiconductor SLV4HC4053ADWRGObsolete	Integrated Circuits (ICs)	LDO REGULATOR, ULTRA-LOW NOISE,
ON Semiconductor FOD4218V	Isolators	OPTOCOUPLER, DIP, 6 PINS, 5 KV, NON ZERO CROSSING, 800 V, FOD4218 SERIES
ON Semiconductor NVMFD5483NLT1GObsolete	Discrete Semiconductor Products	DUAL N-CHANNEL POWER MOSFET 60V, 24A, 36MΩ
ON Semiconductor 2SD1804S-TL-E	Discrete Semiconductor Products	BIP NPN 8A 50V

Series	Category	# Parts	Status	Description

NCP515635 kVRMS Isolated Dual Channel 4.5/9 A Gate Driver with High Channel-to-Channel Spacing	Isolators	2	Active	The NCP51563 are isolated dual-channel gate drivers with 4.5-A/9-A source and sink peak current respectively. They are designed for fast switching to drive power MOSFETs, and SiC MOSFET power switches. The NCP51563 offers short and matched propagation delays. Two independent and 5 kVRMS (UL1577 rating) galvanically isolated gate driver channels can be used in any possible configurations of two low side, two high-side switches or a half-bridge driver with programmable dead time. An enable pin shutdown both outputs simultaneously when is set low. The NCP51563 offers other important protection functions such as independent under-voltage lockout for both gate drivers and enable function.
NCP5162	PMIC	2	Active
NCP51705	Evaluation Boards	1	Active
NCP517523.75 kVRMS, 4.5-A/9-A Isolated Single Channel Gate Driver with Integrated Negative Bias Control	Isolators - Gate Drivers	1	Active	The NCP51752 is a family of isolated single-channel gate driver with 4.5-A/9-A source and sink peak current respectively. They are designed for fast switching to drive power MOSFETs and SiC MOSFET power switches. The NCP51752 offers short and matched propagation delays. For improved reliability, dV/dt immunity and even faster turn−off, the NCP51752 has an innovative embedded negative bias rail mechanism. The NCP51752 offers other important protection function such as independent under-voltage lockout for both-side driver. Its Vcc UVLO threshold is referenced to GND2 for true UVLO regardless of VEE level. The NCP51752 is available in a 4 mm SOIC-8 package and can support isolation voltage up to 3.75 kVRMS.
NCP5181MOSFET / IGBT Drivers, High Voltage, High and Low Side, Dual Input	Evaluation and Demonstration Boards and Kits	2	Active	The NCP5181 is a High Voltage Power Mosfet Driver providing two outputs for direct drive of a 2 N-channel power Mosfets arranged in a half-bridge (or any other high side + low side configuration).It uses the bootstrap technique to insure a proper drive of the High side power switch. The driver works with 2 independent inputs to accomodate any topology (including half-bridge, asymmetrical half-bridge, active clamp and full bridge).
NCP51810High Performance, 150 V Half Bridge Gate Driver for GaN Power Switches	Integrated Circuits (ICs)	1	Active	The NCP51810 high-speed gate driver is designed to meet the stringent requirements of driving enhancement mode (e−mode) GaN HEMT power switches in offline, half-bridge power topologies. The NCP51810 offers short and matched propagation delays as well as −3.5 V to +150 V (typical) common-mode voltage range for the high−side drive. To fully protect the gate of the GaN power transistor against excessive voltage stress, both drive stages employ a dedicated voltage regulator to accurately maintain the gate-source drive signal amplitude. The NCP51810 offers important protection functions such as independent under−voltage lockout (UVLO) and IC thermal shutdown.
NCP51820High Performance, 650 V Half Bridge Gate Driver for GaN Power Switches	Power Management (PMIC)	1	Active	The NCP51820 high-speed gate driver is designed to meet the stringent requirements of driving enhancement mode (e−mode) and gate injection transistor (GIT) GaN HEMT power switches in offline, half-bridge ZVS power topologies. The NCP51820 offers short and matched propagation delays as well as a −3.5 V to +650 V (typical) common-mode voltage range for the high−side drive. To fully protect the gate of the GaN power transistor against excessive voltage stress, both drive stages employ a dedicated voltage regulator to accurately maintain the gate-source drive signal amplitude. The NCP51820 offers important protection functions such as independent under−voltage lockout (UVLO) and IC thermal shutdown.
NCP5183High Voltage 4.3 A High and Low Side Driver	Power Management (PMIC)	1	Active	The NCP5183 is a High Voltage High Current Power MOSFET Driver providing two outputs for direct drive of 2 N−channel power MOSFETs arranged in a half−bridge (or any other high−side + low−side) configuration.It uses the bootstrap technique to insure a proper drive of the High−side power switch. The driver works with 2 independent inputs to accommodate any topology (including half−bridge, asymmetrical half−bridge, active clamp and full−bridge…).
NCP52032-in-1 DDR Power Controller	Power Management (PMIC)	1	Obsolete	The NCP5203 2-in-1 DDR Power Controller is a complete power solution for an ACPI compliant high current DDR memory system. This IC combines the efficiency of a PWM controller for the VDDQ supply with the simplicity of linear regulator for the VTT termination voltage. The NCP5203 contains a synchronous PWM buck controller for driving two external NFETs to form the DDR memory supply voltage (VDDQ). The +/- 2.0A user adjustable VTT terminator regulator has short circuit protection. An internal power good function monitors both the VDDQ and VTT outputs and signals if a fault occurs. Protective features include soft-start, under-voltage monitoring of 5VDUAL, over current protection (OCP), and thermal shutdown. The IC is packaged in 18-lead QFN.
NCP5211	PMIC	1	Obsolete