NCP51810 Series

High Performance, 150 V Half Bridge Gate Driver for GaN Power Switches

Catalog

High Performance, 150 V Half Bridge Gate Driver for GaN Power Switches

Part	Gate Type	Voltage - Supply [Max]	Voltage - Supply [Min]	Operating Temperature	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Package / Case	Number of Drivers	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Channel Type	Mounting Type	Input Type	Supplier Device Package	Driven Configuration	High Side Voltage - Max (Bootstrap) [Max]
ON Semiconductor NCP51810AMNTWG	N-Channel MOSFET	17 V	9 V	150 °C	2 A	1 A	15-VFQFN	1	2 ns	1.5 ns	Single	Surface Mount	Non-Inverting	15-QFN (4x4)	Half-Bridge	150 V

Catalog

High Performance, 150 V Half Bridge Gate Driver for GaN Power Switches

Key Features

• 150 V, high side and low side gate driver

• Fast propagation delay of 50 ns max

• 200 V/ns dV/dt Rating for all SW and PGND Referenced Circuitry

• Separate source and sink output pin

• Regulated 5.2 V gate driver with independent UVLO for high side and low side output stages

• QFN 4 mm x 4 mm 15 pin packaging and optimized pin out

Description

The NCP51810 high-speed gate driver is designed to meet the stringent requirements of driving enhancement mode (e−mode) GaN HEMT power switches in offline, half-bridge power topologies. The NCP51810 offers short and matched propagation delays as well as −3.5 V to +150 V (typical) common-mode voltage range for the high−side drive. To fully protect the gate of the GaN power transistor against excessive voltage stress, both drive stages employ a dedicated voltage regulator to accurately maintain the gate-source drive signal amplitude. The NCP51810 offers important protection functions such as independent under−voltage lockout (UVLO) and IC thermal shutdown.