NCP51752 Series

3.75 kVRMS, 4.5-A/9-A Isolated Single Channel Gate Driver with Integrated Negative Bias Control

Catalog

3.75 kVRMS, 4.5-A/9-A Isolated Single Channel Gate Driver with Integrated Negative Bias Control

Part	Current - Output High, Low [custom]	Current - Output High, Low [custom]	Common Mode Transient Immunity (Min) [Min]	Approval Agency	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package	Pulse Width Distortion (Max)	Voltage - Output Supply [Max]	Voltage - Output Supply [Min]	Propagation Delay tpLH / tpHL (Max) [custom]	Propagation Delay tpLH / tpHL (Max) [custom]	Number of Channels	Technology	Package / Case	Package / Case [y]	Package / Case [x]	Voltage - Isolation	Current - Peak Output
ON Semiconductor NCP51752CDDR2G	9 A	4.5 A	200 V/ns	CQC UL VDE	Surface Mount	125 °C	-40 °C	8-SOIC	5 ns	30 V	13.5 V	55 ns	55 ns	1	Capacitive Coupling	8-SOIC	3.9 mm	0.154 in	3750 Vrms	4.5 A 9 A

Catalog

3.75 kVRMS, 4.5-A/9-A Isolated Single Channel Gate Driver with Integrated Negative Bias Control

Key Features

• 4.5-A Peak Source, 9-A Peak Sink Output Current

• Integrated Negative Bias Control -2/-3/-4/-5-V

• 36 ns Propagation Delay with 5 ns Max Delay Matching

• 3-V to 20-V Input Supply Voltage

• 200V/ns dV/dt Immunity

• 3.75 kVRMS Isolation for 1 Minute (per UL1577 Requirements)

• UVLO options 6-V and 8-V for MOSFET, 12-V and 17-V for SiC

Description

The NCP51752 is a family of isolated single-channel gate driver with 4.5-A/9-A source and sink peak current respectively. They are designed for fast switching to drive power MOSFETs and SiC MOSFET power switches. The NCP51752 offers short and matched propagation delays. For improved reliability, dV/dt immunity and even faster turn−off, the NCP51752 has an innovative embedded negative bias rail mechanism. The NCP51752 offers other important protection function such as independent under-voltage lockout for both-side driver. Its Vcc UVLO threshold is referenced to GND2 for true UVLO regardless of VEE level. The NCP51752 is available in a 4 mm SOIC-8 package and can support isolation voltage up to 3.75 kVRMS.