FQP14N30Power MOSFET, N-Channel, QFET<sup>®</sup>, 300 V, 14.4 A, 290 mΩ, TO-220 | Transistors | 2 | Active | This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. |
FQP15P12Power MOSFET, P-Channel, QFET<sup>®</sup>, -120 V, -15 A, 0.2 Ω, DPAK | Discrete Semiconductor Products | 1 | Obsolete | This P-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. |
FQP17N40Power MOSFET, P-Channel, QFET<sup>®</sup>, -60 V, -17 A, 120 mΩ, TO-220 | Single FETs, MOSFETs | 2 | Active | This P-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. |
FQP19N20Power MOSFET, N-Channel, QFET<sup>®</sup>, 200 V, 19.4 A, 150 mΩ, TO-220 | Single FETs, MOSFETs | 1 | Obsolete | This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. |
FQP20N06LPower MOSFET, N-Channel, Logic Level, QFET<sup>®</sup>, 60 V, 21 A, 55 mΩ, TO-220 | Single | 2 | Obsolete | This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. |
FQP22N30Power MOSFET, N-Channel, QFET<sup>®</sup>, 300 V, 21 A, 160 mΩ, TO-220 | FETs, MOSFETs | 1 | Obsolete | This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. |
FQP24N08Power MOSFET, N-Channel, QFET<sup>®</sup>, 80 V, 24 A,, 60 mΩ, TO-220 | Transistors | 1 | Obsolete | This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. |
FQP27N25Power MOSFET, N-Channel, QFET<sup>®</sup>, 250 V, 25.5 A, 110 mΩ, TO-220 | Transistors | 2 | Active | This P-Channel enhancement mode power MOSFET is produced using ON Semiconductor Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. |
FQP2P40Power MOSFET, P-Channel, QFET<sup>®</sup>, -400 V, -2.0 A, 6.5 Ω, TO-220 | Single | 6 | Active | These P-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are wellsuited for electronic lamp ballast based on complimentary half bridge. |
FQP30N06LPower MOSFET, N-Channel, Logic Level, QFET<sup>®</sup>, 60 V, 32 A, 35 mΩ, TO-220 | Discrete Semiconductor Products | 2 | Obsolete | This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.. |