FQP2P40 Series

Power MOSFET, P-Channel, QFET®, -400 V, -2.0 A, 6.5 Ω, TO-220

Catalog

Power MOSFET, P-Channel, QFET®, -400 V, -2.0 A, 6.5 Ω, TO-220

Part	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Supplier Device Package	Technology	Current - Continuous Drain (Id) @ 25°C	Mounting Type	FET Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs [Max]
ON Semiconductor FQP2N80	5 V	85 W	-55 °C	150 °C	10 V	TO-220-3	550 pF	30 V	6.3 Ohm	800 V	TO-220-3	MOSFET (Metal Oxide)	2.4 A	Through Hole	N-Channel
ON Semiconductor FQP2P40	5 V		-55 °C	150 °C	10 V	TO-220-3		30 V	6.5 Ohm	400 V	TO-220-3	MOSFET (Metal Oxide)	2 A	Through Hole	P-Channel	350 pF	63 W	13 nC
ON Semiconductor FQP2P25	5 V		-55 °C	150 °C	10 V	TO-220-3	250 pF	30 V	4 Ohm	250 V	TO-220-3	MOSFET (Metal Oxide)	2.3 A	Through Hole	P-Channel		52 W	8.5 nC
ON Semiconductor FQP2N80	5 V	85 W	-55 °C	150 °C	10 V	TO-220-3	550 pF	30 V	6.3 Ohm	800 V	TO-220-3	MOSFET (Metal Oxide)	2.4 A	Through Hole	N-Channel
ON Semiconductor FQP2P40-F080	5 V		-55 °C	150 °C	10 V	TO-220-3		30 V	6.5 Ohm	400 V	TO-220-3	MOSFET (Metal Oxide)	2 A	Through Hole	P-Channel	350 pF	63 W	13 nC
ON Semiconductor FQP2N40	5 V		-55 °C	150 °C	10 V	TO-220-3	150 pF	30 V		400 V	TO-220-3	MOSFET (Metal Oxide)	1.8 A	Through Hole	N-Channel		40 W	5.5 nC	5.8 Ohm

Catalog

Power MOSFET, P-Channel, QFET®, -400 V, -2.0 A, 6.5 Ω, TO-220

Key Features

-2.0 A, -400 V, RDS(on)= 6.5 Ω (Max.) @ VGS= -10 V

• Low Gate Charge (Typ. 10 nC)

• Low Crss (Typ. 6.5 pF)

• Fast Switching

• 100% Avalanche Tested

• Improved dv/dt Capability

Description

These P-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are wellsuited for electronic lamp ballast based on complimentary half bridge.