FQP14N30 Series

Power MOSFET, N-Channel, QFET®, 300 V, 14.4 A, 290 mΩ, TO-220

Catalog

Power MOSFET, N-Channel, QFET®, 300 V, 14.4 A, 290 mΩ, TO-220

Part	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Rds On (Max) @ Id, Vgs [Max]	FET Type	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Vgs (Max)	Power Dissipation (Max)	Package / Case	Drive Voltage (Max Rds On, Min Rds On)
ON Semiconductor FQP14N30	-55 °C	150 °C	MOSFET (Metal Oxide)	40 nC	300 V	1360 pF	Through Hole	290 mOhm	N-Channel	TO-220-3	14.4 A	5 V	30 V	147 W	TO-220-3	10 V
ON Semiconductor FQP14N30	-55 °C	150 °C	MOSFET (Metal Oxide)	40 nC	300 V	1360 pF	Through Hole	290 mOhm	N-Channel	TO-220-3	14.4 A	5 V	30 V	147 W	TO-220-3	10 V

Catalog

Power MOSFET, N-Channel, QFET®, 300 V, 14.4 A, 290 mΩ, TO-220

Key Features

• 14.4A, 300V, RDS(on)= 290mΩ(Max.) @VGS= 10 V, ID= 7.2A

• Low gate charge ( Typ. 30nC)

• Low Crss( Typ. 23pF)

• 100% avalanche tested

Description

This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.