FQP22N30 Series

Power MOSFET, N-Channel, QFET®, 300 V, 21 A, 160 mΩ, TO-220

Catalog

Power MOSFET, N-Channel, QFET®, 300 V, 21 A, 160 mΩ, TO-220

Part	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Mounting Type	Technology	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Package / Case	Rds On (Max) @ Id, Vgs	FET Type	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds
ON Semiconductor FQP22N30	5 V	21 A	-55 °C	150 °C	30 V	Through Hole	MOSFET (Metal Oxide)	170 W	10 V	60 nC	TO-220-3	TO-220-3	160 mOhm	N-Channel	300 V	2200 pF

Catalog

Power MOSFET, N-Channel, QFET®, 300 V, 21 A, 160 mΩ, TO-220

Key Features

• 21A, 300V, RDS(on)= 160mΩ(Max.) @VGS= 10 V, ID= 10.5A

• Low gate charge ( Typ. 47nC)

• Low Crss( Typ. 40pF)

• 100% avalanche tested

Description

This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.